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Low Dielectric Constant Fluorinated Polyimides for Interlayer Dielectric Applications

Published online by Cambridge University Press:  15 February 2011

John Pellerin
Affiliation:
On Assignment from AMD, Inc., Austin, TX
Robert Fox
Affiliation:
SEMATECH, 2706 Montopolis Drive Austin TX 78741
Huei-Min Ho
Affiliation:
On Assignment from Intel Corp., Santa Clara, CA
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Abstract

This paper presents the results of development, characterization and integration screening of low dielectric constant (low k) fluorinated polyimides for interlayer dielectric applications. Evolution of these materials has progressed with the intent of improving fundamental thin film properties, such as thermal stress behavior, modulus, CTE, and dielectric constant. Further refinements to fluorinated polyimides have been to improve their process compatibility and integration characteristics, primarily in the area of deep sub-micron gap filling. The avenues taken to attain these objectives will be illustrated.

Subsequent integration of low k fluorinated polyimides has been achieved for a completed single-level metal BEOL test vehicle to highlight the impacts of the film's adhesion, mechanical and thermomechanical properties. In addition, the completed fluorinated polyimide single-level metal structures have been used to characterize electrical performance in contrast to single-level metal structures with TEOS dielectric. Intralevel capacitance and leakage current have been measured with dual comb and serpentine structures. Modeling has been applied to verify dielectric constant in submicron geometries from the capacitance measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Auman, B. in Low Dielectric Constant Thin Films for Microelectronics Applications (Mat. Res. Soc. Proc. 381, Pittsburgh, PA, 1995), pp. 1929.Google Scholar
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3. Pellerin, J. G., PhD Thesis, University of Texas at Austin, 1996.Google Scholar