Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:11:24.103Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Damage Nitridation of Silicon Oxide Surfaces By Remote-Plasma-Excited Nitrogen

Published online by Cambridge University Press:  10 February 2011

Yoji Saito  and
Ukyo Mori
Yoji Saito
Affiliation:
Department of Electrical Eng. & Elec., Seikei University, Musashino, Tokyo 180-8633, Japan, [email protected] Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, [email protected]
Ukyo Mori
Affiliation:
Department of Electrical Eng. & Elec., Seikei University, Musashino, Tokyo 180-8633, Japan, [email protected]
Get access

Abstract

We incorporated significant density of nitrogen only near the top surfaces of the thermally grown oxides by the fluorination at room temperature followed by atomic nitrogen treatment around 550°C. Average nitrogen concentration of more than 6 percent was obtained in the nitrided layer with thickness below 1 nm. We fabricated MOS devices using the nitrided oxide films without hydrogenation, and measured capacitance-voltage characteristics. The density of nitridation-induced interface defects in the MOS device was estimated to be below 2×1010 cm−2. The proposed technique identifies a unique process for obtaining high quality ultrathin dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 33
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Hu, G.J., Bruce, R.H., IEEE Trans. Electron Devices ED-32, 584 (1985).10.1109/T-ED.1985.21981Google Scholar
2 Hillenius, S.J., Liu, R., Georgiou, G.E., Field, R.L., Williams, D.S., Kornblit, A., Boulin, D.M., Johnston, R.L., Lynch, W.T., IEDM.Tech. Digest (1986) p. 252.Google Scholar
4 Yu, B., Ju, D-H., Kepler, N., Hu, C., IEEE Electron Devices Lett. EDL-18 (1997) 312.10.1109/55.596922Google Scholar
3 Kuroi, T., Kobayashi, M., Shirohata, M., Okumura, Y., Kusunoki, S., Inuishi, M., Tsubouchi, N., Jpn. J. Appl. Phys. 34, 771 (1995).10.1143/JJAP.34.771Google Scholar
6 Saito, Y., Appl. Phys. Lett. 68, 800 (1996).10.1063/1.116537Google Scholar
5 Hattangady, S.V., Niimi, H., Lucovsky, G., Appl. Phys. Lett. 66, 3495 (1995).10.1063/1.113775Google Scholar
7 Saito, Y., Mori, U., Jpn. J. Appl. Phys. 37, L1172 (1998).10.1143/JJAP.37.L1172Google Scholar
8 Aoyama, T., Suzuki, K., Tashiro, H., Toda, Y., Yamazaki, T., Takahashi, K., Ito, T., J. Appl. Phys. 77, 417 (1995).10.1063/1.359343Google Scholar