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Low Coherence Interferometry for Non-Invasive Semiconductor Monitoring

Published online by Cambridge University Press:  22 February 2011

Chris M. Lawson  and
Robert R. Michael
Chris M. Lawson
Affiliation:
Department of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35294
Robert R. Michael
Affiliation:
BDM Federal Inc., 1501 BDM Way, McLean, Virginia 22102
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Abstract

We report on the first use of optical low coherence reflectometry (OLCR) for Edge Defined Film-Fed Growth (EFG) silicon characterization. This OLCR sensor system has been used to measure horizontal profiles of silicon thickness and flatness to an accuracy of 1.5 Rim with the sensor head positioned 1 cm away from the silicon. The use of this noninvasive sensor for EFG silicon growth monitoring may lead to more efficient solar cell manufacturing processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 415
Copyright
Copyright © Materials Research Society 1994

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References

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