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Long-Term Stability of Thermally-Carbonized Porous Silicon Humidity Sensor

Published online by Cambridge University Press:  15 February 2011

J. Tuura
Affiliation:
Department of Physics, University of Turku, FI-20014
M. Björkqvist
Affiliation:
Department of Physics, University of Turku, FI-20014
J. Salonen
Affiliation:
Department of Physics, University of Turku, FI-20014
V-P. Lehto
Affiliation:
Department of Physics, University of Turku, FI-20014
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Abstract

Thermally-carbonized porous silicon humidity sensor showed ageing affecting electrical characteristics. During the first month the variations in electrical characteristics were very distinctive. The decline in the sensitivity of the sensor after three months storage was found to be 37%, however, the sensitivity was still over 200%. When aged, the sensor stabilized and only minor variations on capacitance were noticeable. Sensitivity, on other hand, remains nearly constant. The hysteresis of the sensor did not change remarkably during storage. The variations on capacitance values at different relative humidities during storage were measured as a function of detection frequency. This showed an interesting feature of the ageing of the sensor, which is also discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

[1] Bomchil, G., Herino, R., Barla, K. and Pfister, J. C., J. Electrochem. Soc. 130, 1611 (1983).Google Scholar
[2] Saha, H., Dey, S., Das, J. and Hossain, S. M., Proceedings of IEEE 1, 146(2002).Google Scholar
[3] Beckmann, K. H., Surface Science 3, 314 (1965).Google Scholar
[4] Canham, L., Microtechnologies in Medicine and Biology 1st Annual International Conference, 109 (2000).Google Scholar
[5] Li, Y. Y., Cunin, F., Link, J. R., Gao, T., Betts, R. E., Reiver, S. H., Chin, V., Bhatia, S. N. and Sailor, M. J., Science 299, 2045 (2003).Google Scholar
[6] Lammel, G., Schweizer, S. and Renaud, Ph., Sensors and Actuators A 92, 52 (2001).Google Scholar
[7] Wei, J., Buriak, J. M. and Siuzdak, G., Nature 399, 243 (1999).Google Scholar
[8] Wong, H., Microelectronics Reliability 42, 317 (2002).Google Scholar
[9] Björkqvist, M., Salonen, J., Paski, J. and Laine, E., Sensors and Actuators A 112, 244 (2004).Google Scholar
[10] Björkqvist, M., Paski, J., Salonen, J. and Lehto, V.-P., IEEE Sensors Journal, accepted.Google Scholar