Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T07:41:54.338Z Has data issue: false hasContentIssue false
  • English
  • Français

Long-Pulse Duration Excimer Laser Processing in the Fabrication of High Performance Polysilicon TFTs for Large Area Electronics

Published online by Cambridge University Press:  17 March 2011

E. Fogarassy ,
B. Prévot ,
S. de Unamuno ,
C. Prat ,
D. Zahorski ,
Y. Helen  and
T. Mohammed-Brahim
E. Fogarassy
Affiliation:
Laboratoire CNRS-PHASE, BP 20, 67037 Strasbourg, France
B. Prévot
Affiliation:
Laboratoire CNRS-PHASE, BP 20, 67037 Strasbourg, France
S. de Unamuno
Affiliation:
Laboratoire CNRS-PHASE, BP 20, 67037 Strasbourg, France
C. Prat
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
D. Zahorski
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
Y. Helen
Affiliation:
G.M.V. Université de Rennes I, 35042 Rennes, France
T. Mohammed-Brahim
Affiliation:
G.M.V. Université de Rennes I, 35042 Rennes, France
Get access

Abstract

In this work, was investigated both numerically and experimentally, the excimer laser processing of a-Si films deposited on SiO2-coated glass substrates, using the very large area (∼ 20 cm2) and long pulse duration (200 ns) excimer source from SOPRA Company. Experiments were carried out in air or in neutral atmosphere, using both the single- and multi-shot mode. From the microstructural analysis of the laser irradiated area the formation of a large-grained material through the so-called SLG regime was evidenced. In addition, the application of a multi-shot process was demonstrated to be very efficient to prepare uniform polysilicon layers with enlarged grain sizes (up to 1.5 µm after 20 shots). Finally, poly-Si TFTs prepared in the optimized conditions (multi-shot, neutral ambience) exibited field effect mobilities up to 235 cm2/V.s (for N-type) and 84 cm2/V.s (for P-type), with fairly uniform device characteristics over large area and excellent stability under electrical stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D7.1.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sameshima, T., Hara, M. and Usui, S., Jpn. J. Appl. Phys. 28, 1789 (1989).Google Scholar
2. Sera, K., Okumura, F., Uchida, H., Itoh, S., Kaneko, S. and Hotta, K., IEEE Trans. Electron Devices 36, 2868 (1989).Google Scholar
3. Brotherton, S. D., McCulloch, D. J., Clegg, J. B. and Gowers, J.P., IEEE Trans. Electron Devices 40, 407 (1993).Google Scholar
4. Fogarassy, E., Pattyn, H., Elliq, M., Slaoui, A., Prévot, B., Stuck, R., Unamuno, S. de and Mathé, E. L., Appl. Surf. Sci. 69, 231 (1993).Google Scholar
5. Kohno, A., Sameshima, T., Sano, N., Sekiya, M. and Hara, M., IEEE Trans. Electron Devices 42, 251 (1995).Google Scholar
6. Im, J. S., Kim, H. J. and Thompson, M. O., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar
7. Thompson, M. O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G. and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).Google Scholar
8. Stiffler, S. R., Thompson, M. O. and Peercy, P. S., Phys. Rev. Lett. 60, 2519 (1988).Google Scholar
9. Suga, K., Takeuchi, F., Takizawa, Y., Mishima, Y. and Okabe, M., AM-LCD'97, 159 (1997).Google Scholar
10. Marmorstein, A., Voutsas, A. and Solanki, R., J. Appl. Phys. 82, 4303 (1997).Google Scholar
11. Brotherton, S. D., McCulloch, D. J., Gowers, J. P., Ayres, J. R. and Trainor, M. J., J. Appl. Phys. 82, 4086 (1997).Google Scholar
12. Pribat, D., Legagneux, P., Collet, C., Plais, F., Huet, O. and Reita, C., AM-LCD'98, 9 (1998).Google Scholar
13. Toet, D., Smith, P. M., Sigmon, T. W., Takehara, T., Tsai, C. C., Harshbarger, W. R. and Thompson, M. O., J. of Appl. Phys. 85, 7914 (1999).Google Scholar
14. Boyce, J. B., Mei, P., Fulks, R. T. and Ho, J., Phys. Stat. Sol. (a) 166, 729 (1998).Google Scholar
15. Plais, F., Legagneux, P., Reita, C., Huet, O., Petinot, F., Pribat, D., Godard, B., Stehlé, M. and Fogarassy, E., Microelectronic Engineering 28, 443 (1995).Google Scholar
16. Fogarassy, E., Unamuno, S. de, Prévot, B., Boher, P., Stehlé, M. and Pribat, D., Appl. Phys. A 68, 631 (1999).Google Scholar
17 Sameshima, T., MRS proceedings Vol.283, 679 (1993).Google Scholar
18 Hatano, M., Moon, S., Lee, M., Suzuki, K. and Grigoropoulos, C.P., J. Appl. Phys. 87, 36 (2000).Google Scholar
19 Letardi, T., Baldesi, A., Bollanti, S., Bonfigli, F., Lazzaro, P. Di, Flora, F., Giordano, G., Marinai, A., Murra, D., Schina, G. and Zheng, C., Proc. of SPIE, Vol. 3888, 587 (2000).Google Scholar
20. Unamuno, S. de and Fogarassy, E., Appl. Surf. Sci. 36, 1 (1989).Google Scholar
21. Fogarassy, E. and Unamuno, S. de, Proc. of SPIE, Vol.3888, 229 (2000).Google Scholar
22 Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Kawata, H., Osumi, M., Tsuda, S., Nakano, S. and Kuwano, Y., Jpn. J. of Appl. Phys. 30, 3700 (1991).Google Scholar
23. Fogarassy, E., Unamuno, S. de, Prévot, B., Harrer, T. and Maresch, S., Thin Solid Films, 383, 48 (2001).Google Scholar
24 Nemanich, R.J. and Solin, S.A., Phys. Rev. B 20, 392 (1979).Google Scholar
25 Lyon, S.A., Nemanich, R.J., Johnson, N.M. and Biegelsen, D.K., Appl. Phys. Lett. 40, 316 (1982).Google Scholar
26 Toet, D., Koopmans, B., Santos, P.V., Bergmann, R.B. and Richards, B., Appl. Phys. Lett. 69, 3719 (1996).Google Scholar
27 Kitahara, K., Suga, K., Hara, A. and Nakajima, K., Jnp. J. Appl. Phys. 35, L1473 (1996).Google Scholar
28 Fork, D.K., Anderson, G.B., Boyce, J.B., Johnson, R.I. and Mei, P., Appl. Phys. Lett. 68, 2138 (1996).Google Scholar
29 Lee, K.H., Hwang, J.T., Jung, C.Y., Ihn, T.H., Yi, S.J., Jeon, H.I., Lee, W.G., Choi, D.H., Jang, J., Zahorski, D. and Lee, C.H., J.of the Korean Phys. Soc. Vol. 34, S268 (1999).Google Scholar
30 Kuriyama, H., Nohda, T., Ishida, S., Kuwahara, T., Noguchi, S., Kiyama, S., Tsuda, S. and Nakano, S., Jnp. Appl. Phys. Vol. 32, 6190 (1993).Google Scholar
31 McCulloch, D.J. and Brotherton, S.D., Appl. Phys. Lett.66, 2060 (1995).Google Scholar
32 Helen, Y., Gautier, G., Mourgues, K., Mohammed-Brahim, T., Raoult, F., Bonnaud, O., Prat, C., Zahorski, D. and Lemoine, D., Presented at « The Electrochemical Society 198th Meeting » (Phoenix, AZ, Oct.22-27, 2000).Google Scholar