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Long-Living Shallow Donor Excited States And Fir-Ir Up-Conversion In Gap:Te
Published online by Cambridge University Press: 15 February 2011
Abstract
Tellurium donors in GaP have been ionized by phonon assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component reproducing the laser pulse and a slow component which rises after the irradiation has ceased and finally exponentially decays with a strongly temperature dependent time constant in the range of microseconds to several milliseconds. This temporal structure of the signal is explained by a cascade capture mechanism and subsequent accumulation of carriers in a long-living shallow donor excited state, identified as valley-orbit split 1s(E) level of Te. The final step of recombination is achieved by radiative transitions, which is proved by the observation of far-infrared to mid-infrared up-conversion.
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- Copyright © Materials Research Society 1997