Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:33:18.502Z Has data issue: false hasContentIssue false
  • English
  • Français

Longitudinal Vibrational Absorption Modes of Hydrogenated Amorphous Silicon Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

Tong Li  and
Jerzy Kanicki
Tong Li
Affiliation:
Center for Display Technology and Manufacturing, Dept. of EECS The University of Michigan, Ann Arbor, Michigan 48105
Jerzy Kanicki
Affiliation:
Center for Display Technology and Manufacturing, Dept. of EECS The University of Michigan, Ann Arbor, Michigan 48105
Get access

Abstract

We have identified longitudinal and transverse optical modes of Si-N bond in vibrational absorption spectrum of hydrogenated amorphous silicon nitride thin films. The locations of longitudinal optical resonances coincide with transverse mode of Si-O and closely neighbor bending modes of N-H, Si-H2 bond. Furthermore, the conventionally assigned asymmetric and symmetric stretching modes of Si-N bond are merely transverse modes of Si-N bond. Features of pure longitudinal vibrational modes can be revealed by subtracting appropriately scaled transverse mode components from the vibrational absorption spectrum. Analysis of the longitudinal spectrum indicates that, in addition to their association with Si-N bond, the density of the peak located at about 1215 cm−1 is also well correlated to hydrogen and nitride content in the film, while the density of the peak located at about 880 cm−1 is closed related to silicon density in the film. Peak located at about 1040 cm−1 is the longitudinal mode associated with Si-N bond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 535
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 , Finger, Kroll, U., Viret, V., and Shah, A., Beyer, W., Tang, X. M., Weber, J., Howling, A., and Hollenstein, Ch., J. Appl. Phys. 71, 5665 (1992).Google Scholar
2 Piccirillo, A. and Gobbi, A. L., J. Electrochem. Soc. 137, 3910 (1990).Google Scholar
3 , Hasegawa, He, L., Amano, Y., and Inokuma, T., Phys. Rev B 48, 5315 (1993).Google Scholar
4 Auer, J., Meisels, R., and Kuchar, F., Infrared Phys. & Tech. 38, 223 (1997).Google Scholar
5 , Hecht, Optics, 2nd ed. (Addison-Wesley, 1989), Chapter 8.Google Scholar
6 Berremen, D. W., Phys. Rev. 130, 2193 (1963).Google Scholar
7 Kirk, C. T., Phys. Rev B 38 1255, (1988).Google Scholar
8 Scott, J. F. and S. Porto, P. S., Phys. Rev. B 161, 903 (1967).Google Scholar
9 Koller, K. B., Schmidt, W. A., and Butler, J. E., J. Appl. Phys. 64, 4704 (1988).Google Scholar
10 Lyddane, R. H., Sachs, R. G., and Teller, E., Phys. Rev. 59, 673 (1941).Google Scholar
11 Hawegawa, S., Matsuda, M., and Kurata, Y., Appl. Phys. Lett. 57, 2211 (1990).Google Scholar
12 Lucovsky, G., Yang, J., Chao, S. S., Tyler, J. E., and Czubatyj, W., Phys. Rev. B 28, 3234 (1983).Google Scholar
13 Lange, P., J. Appl. Phys. 66, 201 (1989); P. Lange, U. Schnakenberg, S. Ullerich, and H. J. Schliwinski, ibid., 68, 3532 (1990).Google Scholar
14 Gaskell, P. H. and Johnson, D. W., J. Non-Cryst. Solids 20, 171 (1976).Google Scholar
15 Kanicki, J. and Wagner, P., Electrochem. Soc. Proc. 87–10 261 (1987).Google Scholar
16 Li, T. and Kanicki, J., unpublished.Google Scholar
17 Li, T., Chen, C. Y., Malone, C. T., and Kanicki, J. in Flat Panel Display Materials II, edited by Hatalis, M. K., Kanicki, J., Summers, C. J., and Funada, F. (Mater. Res. Soc. Proc. 424, San Francisco, CA, 1996) pp. 43.Google Scholar
18 Li, T., Kanicki, J., Fitzner, M., and Warren, W. L., Proc. of AMLCDs '95 (Lehigh, PA, 1995) pp.123.Google Scholar
19 Zanzucchi, J., Solid State Commun. 34, 283 (1984).Google Scholar