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Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response Via Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

D.K. Sengupta ,
W. Fang ,
J.I. Malin ,
H.C. Kuo ,
T. Horton ,
A. Curtis ,
N.F. Gardner ,
B. Flachsbart ,
W. Wohlmuth  and
D. Turnbull
...Show all authors
D.K. Sengupta
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
W. Fang
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
J.I. Malin
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
H.C. Kuo
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
T. Horton
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
A. Curtis
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
N.F. Gardner
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
B. Flachsbart
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
W. Wohlmuth
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
D. Turnbull
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
S.L. Chuang
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
K. C. Hsieh
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
K.Y. Cheng
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
I. Adesida
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
M. Feng
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
S.G. Bishop
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
G. E. Stillman
Affiliation:
Department of Electrical & Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, 11–61801
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Abstract

A shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AIGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 355
Copyright
Copyright © Materials Research Society 1996

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