Hostname: page-component-6bf8c574d5-mggfc Total loading time: 0 Render date: 2025-02-20T14:58:44.550Z Has data issue: false hasContentIssue false
  • English
  • Français

Lognormal Lateral Distribution of Barrier Height in Au/n-GaAs Schottky Junctions?

Published online by Cambridge University Press:  25 February 2011

ZS. J. Horváth
ZS. J. Horváth*
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O. Box 76. H-1325, Hungary
Get access

Abstract

Experimental capacitance-voltage (C-V) characteristics are presented for Au/n-GaAs Schottky contacts. The deviation of the obtained C-V characteristics from the theoretical one including the linear regions of the 1/Ca-V plot may be explained by either the normal or the lognormal lateral distribution of the barrier height. It is concluded that from physical point of view the lognormal lateral distribution of the Schottky barrier height proposed first in this work, is more likely than the normal distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 367
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohdomari, I., Kuan, T. S., and Tu, K. N., J. Appl. Phys. 50, 7020 (1979).CrossRefGoogle Scholar
2. Schneider, M. V., Cho, A. Y., Kollberg, E., and Zirath, H., Appl. Phys. Lett., 43, 558 (1983).CrossRefGoogle Scholar
3. Hunt, B. D., Schowalter, L. J., Lewis, N., Hall, E. L., Hauenstein, R. J., Schlesinger, T. E., McGill, T. C., Okamoto, M., and Hashimoto, S., Mat. Res. Soc. Symp. Proc, 54, 479 (1986).CrossRefGoogle Scholar
4. Okumura, T. and Shibata, T., Jap. J. Appl. Phys., 27, 2119 (1988).CrossRefGoogle Scholar
5. Larsson, B., Engström, O., Semicond. Sci. Technol., 3, 572 (1988).CrossRefGoogle Scholar
6. Hecht, M. H., Beil, L. D., Kaiser, W. J., and Grunthaner, F. J., Appl. Phys. Lett., 55, 780 (1989).CrossRefGoogle Scholar
7. Tuy, T. Q. and Mojzes, I., Appl. Phys. Lett. 56, 1652 (1990).CrossRefGoogle Scholar
8. Fowell, A. E., Williams, R. H., Richardson, B. E., and Shen, T. -H., Semicond. Sci. Technol., 5, 348 (1990).CrossRefGoogle Scholar
9. Horváth, Zs. J., J. Appl. Phys. 68, 5899, (1990).CrossRefGoogle Scholar
10. Tung, R. T., Levi, A. F. J., Sullivan, J. P., and Schrey, F., Phys. Rev. Lett., 66, 72 (1991).CrossRefGoogle Scholar
11. Dobrocka, E. and Osvald, J., presented at the Int. Workshop Characterization of Semicond. Substrates and Structures, Smolenice, Czecho-Slovakia, April 1–4, 1992;Google Scholar
Osvald, J., presented at the Int. Workshop Characterization of Semicond. Substrates and Structures, Smolenice, Czecho-Slovakia, April 1–4, 1992; (unpublished).Google Scholar
12. Song, Y. P., Van Meirhaeghe, R. L., Lallére, W. H., and Cardon, F., Solid-State Electron., 29, 633 (1986).CrossRefGoogle Scholar
13. Chin, V. W. L., Green, M. A., and Storey, J. W. V., Solid-State Electron., 33, 299 (1990).CrossRefGoogle Scholar
14. Werner, J. H. and Güttler, H. H., J. Appl. Phys., 69, 1522 (1991).CrossRefGoogle Scholar
15. Tung, R. T., Appl. Phys. Lett., 58, 2821 (1991).CrossRefGoogle Scholar
16. Siülivan, J. P., Tung, R. T., Pinto, M. R., Graham, W. R., J. Appl. Phys., 70, 7403 (1991).CrossRefGoogle Scholar
17. Horváth, Zs. J., J. Appl. Phys., 64, 443 (1988).CrossRefGoogle Scholar
18. Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981) Chap. 5.Google Scholar
19. Fonash, S. J., J. AppLPhys. 54, 1966 (1983).CrossRefGoogle Scholar
20. Horváth, Zs. J., presented at the 1992 MRS Spring Meeting, San Francisco, CA, USA, 1992.Google Scholar
21. Pócsik, I., Cong. Ampere on Magnetic Resonance and Related Phenomena, Stuttgart 1990, Extended Abstracts, Eds. Mehring, M., von Schütz, J.U., Wolf, H.C. (Springer, Berlin, 1990) p. 70.CrossRefGoogle Scholar
22. Pócsik, I., Mat. Sci. Eng. A, 133, 544 (1991).CrossRefGoogle Scholar
23. Pócsik, I., Mat. Sci. Eng. A, 134, 979 (1991).CrossRefGoogle Scholar
24. Horváth, Zs. J., Appl. Phys. Lett., 54, 931, (1989).CrossRefGoogle Scholar
25. Balasubramanian, N. and Subrahmanyam, A., Semicond. Sci. Technol., 5, 871 (1990).CrossRefGoogle Scholar
26. Horváth, Zs. J., J. Appl. Phys., 64, 6780 (1988).CrossRefGoogle Scholar
27. Horváth, Zs. J., Gyúró, I., Németh-Sallay, M., Tüttö, P., Vacuum, 40, 201, (1990).CrossRefGoogle Scholar
28. Eglash, S. J., Newman, N., Pan, S., Mo, D., Shenai, K., Spicer, W. E., Ponce, F. A., and Collins, D. M., J. Appl. Phys. 61, 5159, (1987).CrossRefGoogle Scholar
29. Hastings, N. A. J. and Peacock, J. B., Statistical Distributions (Butterworths, London, 1975) p. 84.Google Scholar
30. Freeouf, J. L., Jackson, T. N., Laux, S. E., and Woodall, J. M., Appl. Phys. Lett., 40, 634 (1982).CrossRefGoogle Scholar
31. Freeouf, J. L., Jackson, T. N., Laux, S. E., and Woodall, J. M., J. Vac. Sci. Technol., 21, 570 (1982).CrossRefGoogle Scholar