Hostname: page-component-6bf8c574d5-vmclg Total loading time: 0 Render date: 2025-02-18T07:05:25.623Z Has data issue: false hasContentIssue false
  • English
  • Français

Localized States in Electron-Irradiated GaAs

Published online by Cambridge University Press:  28 February 2011

S. D. Kouimtzi ,
C. Melidis  and
C. Achtlleos
S. D. Kouimtzi
Affiliation:
Department of Physics, University of Thessaloniki, Greece and J.J. Thomson Physical Laboratory, University of Reading, Reading, U.K.
C. Melidis
Affiliation:
Department of Physics, University of Thessaloniki, Greece.
C. Achtlleos
Affiliation:
Department of Physics, University of Thessaloniki, Greece.
Get access

Abstract

Band tailing produced by electron irradiation of n-type GaAs at helium temperatures is studied. It has been observed that conductance in the band tailing occurs via localized states as evidenced by the observation of a conductance having a frequency dependence of the form σ⊥ωs where ≈ 1.

Sufficient degree of damage induces variable range hopping, σ ∝ exp (-b/Tl/4) in a defect band. The frequency dependence of the conductivity in this band is very weak.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 223
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] . Mott, N.F. and Davis, E.A., in Electronic Processes in Non-Crystalline Materials (Oxford, Clarendon Press 1971) p. 185.Google Scholar
[2] . Pollak, M. and Geballe, T.H. Phys. Rev. 122, 1742, (1961).Google Scholar
[3] . Pike, G.E., Phys. Rev. B6, 1572, (1972).Google Scholar
[4] . Elliott, S.R., Phil. Mag. 36, 1291, (1977);Google Scholar
Elliott, S.R., Phil. Mag. 37, 553, (1978).Google Scholar
[5] . Kouimtzi, S.D., J. Phys. C: Solid State Phys. 19, 2419 (1986);Google Scholar
Kouimtzi, S.D., J. Phys. C: Solid State Phys. 1, 1437, (1989); Solid State Comm. 65, 1435, (1988).Google Scholar
[6] . Kouimtzi, S.D., in Defects in Materials Edited by Bristowe, P.D., Epperson, J.E., Griffith, J.E. and Weber, Z. (Mater. Res. Soc. 209 Pittsburgh PA 1991 pp. 239–444.Google Scholar
[7] . Kalma, A.H. Trans, I.E.E.E., Nucl. Sci. NS20, 224, (1973).Google Scholar
[8] . Ambegaokar, Y., Halperin, B.I. and Langer, J.S., Phys. Rev. B4, 2612, (1971).Google Scholar
[9] . Mott, N.F., and Davis, J.H., Phil. Mag. B42, 845, (1980).Google Scholar
[10] . Kouimtzi, S.D., Phys. Stat. Sol. b153, 675, (1989).Google Scholar
[11] . Butcher, P.N., Hayden, K.J. and Mclnnes, J.A. Phil. Mag. 36, 19; (1977);CrossRefGoogle Scholar
Butcher, P.N. Phil. Mag. 42 799, (1980).Google Scholar