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Localized Gallium Doping and Cryogenic Deep Reactive Ion etching in Fabrication of Silicon Nanostructures
Published online by Cambridge University Press: 31 January 2011
Abstract
We present a novel fabrication method to create controlled 3-dimensional silicon nanostructures with the lateral dimensions that are less than 50 nm as a result of a rapid clean room compatible process. We also demonstrate periodic and nonperiodic lattices of nanopillars in predetermined positions with the minimum pitch of 100 nm. One of the uses of this process is to fabricate suspended silicon nanowhiskers.
Keywords
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD07-01
- Copyright
- Copyright © Materials Research Society 2009
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