No CrossRef data available.
Article contents
Localized Crystallinity Measurement of Single-Crystal Ge on Insulator by Raman Polarization
Published online by Cambridge University Press: 28 February 2011
Abstract
Agglomeration has occurred during zone-melting to obtain single-crystal germanium layers because of insufficient wettability between germanium and silicon-dioxide. The agglomeration could be suppressed by controlling the capping layer thickness, germanium layer thickness, and the island shape. A rotation of crystal orientation was found in the stripe shape island, which was presumably caused by the stress relieving within an island.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992