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Localization of Hydrogen in B and in Doped Silicon by ion Channeling and PAC
Published online by Cambridge University Press: 26 February 2011
Abstract
The lattice site of H/D atoms in silicon doped with B and 111In atoms is investigated using the ion channeling and perturbed γγ angular correlation (PAC) technique. The results indicate that at 295 K the antibonding site is occupied by H/D and that this site is easily transformed into a near tetrahedral site under the influence of an analyzing ion beam. Based on PAC results, the population of a second site, possibly a bond-center site, is expected at low temperatures.
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- Copyright © Materials Research Society 1988
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