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Local Structural Changes of Ion Damaged InGaAs

Published online by Cambridge University Press:  15 February 2011

Kin Man Yu
Kin Man Yu*
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

Ion damage and amorphization behavior in InGaAs with InAs mole fractions in the range of 0 to 50%are studied. We found that the degree of dynamic annealing increases as the InAs mole fraction increases in the InGaAs when the implantation is carried out at room temperature (RIT). Extended x-ray absorption fine structure measurements reveal that in the amorphous state the InAs nearest neighbor distance, RIn-As is very different from that in the crystalline InGaAs and is ∼0.01 Å longer than that in pure crystalline InAs. For RT implanted materials, before a complete amorphous layer is formed, the RIn-As remains close to its crystalline value even when the layer is heavily damaged. A sudden increase of the RIn-As is observed when a complete amorphous layer is formed. The behavior of the measured values of RIn-As for InGaAs implanted with various doses, indicates that at RT the formation of amorphous InGaAs occurs by the simultaneous nucleation of the amorphous phase when the critical free energy in the damage layer is exceeded. At liquid nitrogen temperature, when dynamic annealing is negligible, the RIn-As value increases as the damage in the layer increases, suggesting that the amorphous InGaAs is formed by the accumulation and overlapping of amorphous zones created along the individual ion tracks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 79
Copyright
Copyright © Materials Research Society 1999

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