Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T01:33:28.911Z Has data issue: false hasContentIssue false
  • English
  • Français

Local Stress Assessment of CVD Diamond with Micro-Raman Spectroscopy Up To 1200K

Published online by Cambridge University Press:  15 February 2011

Li-Chyong Chen ,
Kuei-Hsien Chen ,
Yen-Liang Lai  and
Jin-Yu Wu
Li-Chyong Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan.
Kuei-Hsien Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
Yen-Liang Lai
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
Jin-Yu Wu
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
Get access

Abstract

Raman spectra in CVD diamond films were measured at room temeprature and at high temperatures up to 1200 K. With micron spatial resolution, variations of Raman line from different crystals in the same sample were observed. Both single-peak and multiple-peak analyses were used to assess the stress distribution within the CVD diamond film. In addition, the evolution of Raman line position, line width, and line intensity was monitored as a function of annealing temperature and isothermal holding time. Both (100) and (111) CVD diamond crystals were studied. The detailed evolution of the Raman line width was found to depend on the crystallographic orientation. The temperature dependence of the Raman spectra for CVD and natural diamonds are compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 383: Symposium I – Mechanical Behavior of Diamond and Other Forms of Carbon , 1995 , 165
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yoshikawa, M., Katagiri, G., Ishida, H., et al., Appl. Phys. Lett. 55, 2608 (1989).Google Scholar
2. Wang, W., Liao, K., Gao, J., and Liu, A., Thin Soild Films 215, 174 (1992).Google Scholar
3. Stuart, S. A., Prawer, S., and Weiser, P. S., Diamond and Related Materials 2, 753 (1993).Google Scholar
4. Butler, J. E., Vestyck, D. J. Jr., Mackey, B., et al., Proceedings of 1994 Workshop on Processing & Applications of Diamond Films, Hsin-Chu, Taiwan, pp. 133 (1994).Google Scholar
5. Chen, K. H., Lai, Y. L., Lin, J. C., Song, K. J., Chen, L. C., and Huang, C. Y. (accepted for publication in Diamond and Related Materials).Google Scholar
6. Nayar, R. G. N., Proc. Indian Acad. Sci., Sect. A 13, 284 (1941).Google Scholar
7. Anastassakis, E., Hwang, H. C., and Perry, C. H., Phys. Rev. B 4, 2493 (1971).Google Scholar
8. Borer, W. J., Mitra, S. S., and Namjoshi, K. V., Solid State Commun. 9, 1377 (1971).Google Scholar
9. Krishnan, R. S., Proc. Indian Acad. Sci. 24, 45 (1946).Google Scholar
10. Solin, S. A. and Ramdas, A. K., Phys. Rev. B 1, 1687 (1970).Google Scholar
11. Herchen, H. and Cappelli, M. A., Phys. Rev. B 43, 11740 (1991).Google Scholar
12. Zouboulis, E. S. and Grimsditch, M., Phys. Rev. B 43, 12490 (1991).Google Scholar
13. Wu, J. Y., Juan, C. C., Chen, K H., and Chen, L. C. (in preparation).Google Scholar
14. Grimsditch, M. H., Anastassakis, E., and Cardona, M., Phys. Rev. B 18, 901 (1978).Google Scholar
15. See, for example, Windischmann, H., Epps, G. F., Gong, Y., and Collins, R. W., J. Appl. Phys. 69, 2231 (1991).Google Scholar
16. Evans, T. and Phaal, C., Proc. 5th Biennial Conf. on Carbon (Penn. State Univ.) 147 (1962).Google Scholar
17. Klemens, G., Phys. Rev. 148, 845 (1966).Google Scholar