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Local electromechanical properties of ZnO thin films and micro crystals

Published online by Cambridge University Press:  01 February 2011

Igor Bdikin ,
Maxim Silibin ,
Rachid Ayouchi ,
R Schwarz ,
Sergei Gavrilov ,
Jose Gracio  and
Andrei L. Kholkin
Igor Bdikin
Affiliation:
[email protected], UA, Aveiro, Aveiro, 3810-193, Portugal
Maxim Silibin
Affiliation:
[email protected], Moscow Institute of Electronic Technology, Moscow, Russian Federation
Rachid Ayouchi
Affiliation:
[email protected], Centre for Mechanical Technology & Automation, Centre for Mechanical Technology & Automation, Aveiro, Portugal
R Schwarz
Affiliation:
[email protected], Technical University of Lisbon, Physics Department, Lisbon, Portugal
Sergei Gavrilov
Affiliation:
[email protected], Moscow Institute of Electronic Technology, Moscow, Russian Federation
Jose Gracio
Affiliation:
[email protected], University of Aveiro, Department of Ceramics and Glass Engineering & CICECO, Aveiro, Portugal
Andrei L. Kholkin
Affiliation:
[email protected], University of Aveiro, Department of Ceramics and Glass Engineering & CICECO, Aveiro, Portugal
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Abstract

High-resolution piezoresponse force microscopy (PFM) was used to measure the out-of-plane (effective longtitudinal) and in-plane (effective shear) piezoresponse of zinc oxide films and microrods. Thin films were deposited by pulsed laser deposition (PLD) and micro rods formed from solution. Measurements of three components of piezoresponse, one out-of-plane (OPP) and two in-plane (IPP) signals, allowed the construction of 3D piezoelectric maps reflecting the polycrystalline nature of the films. Both the IPP and OPP piezoresponse signal distributions are analyzed based on the particular texture of the films. It was observed that the central part of microrods contains polarization inversion with head-to-head ferroelectric-like domains. The as-grown domain boundaries were always parallel to the (0001) basal plane. Analysis of the PFM piezoresponse images was done based on the hexagonal structure of ZnO and topographic features along the hexagonal axis.

Keywords

thin filmoxidepiezoelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1256: Symposium N – Functional Oxide Nanostructures and Heterostructures , 2010 , 1256-N02-05
Copyright
Copyright © Materials Research Society 2010

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References

1 Wang, Z. L., J. Phys.: Condens. Matter 16, R829 (2004).Google Scholar
2 Fonoberov, V. A. and Balandin, A. A., J. of Nanoelectronics and Optoelectronics 1, 19 (2006).Google Scholar
3In “Zinc oxide - a material for micro- and optoelectronic applications”, NATO Science Series II: Mathematics, Physics and Chemistry, vol. 194, eds. Nickel, N. H. and Terukov, E. (2005).Google Scholar
4 Wang, X., Summers, C. J., and Wang, Z. L., Nano Lett. 4, 423 (2004).Google Scholar
5 Özgür, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Doðan, S., Avrutin, V., Cho, S.-J., and Morkoç, H., J. Appl. Phys. 98, 041301 (2005).Google Scholar
6 Hickermell, F. S., Proc. IEEE 64, 631 (1976).Google Scholar
7 Wang, Z. L., Materials Today 10, 20 (2007).Google Scholar
8 Scrymgeour, D. A., Sounart, T. L., Simmons, N. C., and Hsu, J. W. P., J. Appl. Phys. 101, 014316 (2007).Google Scholar
9 Xiang, H. J., Yang, J., Hou, J. G., and Zhu, Q., Appl. Phys. Lett. 89, 223111 (2006).Google Scholar
10 Zhao, M.H., Wang, Z.L., and Mao, S. X., Nano Lett. 4, 587 (2004).Google Scholar
11 Sanguino, P., Koynov, S., Niehus, M., Melo, L., Schwarz, R., and Alves, H., Materials Research Society Symposium Proceedings 677, 693 (2001).Google Scholar
12 In Electromechanics on the nanometer scale: emerging phenomena, devices, and applications (Eds. Kalinin, S. V., Setter, N., and Kholkin, A. L.), Materials Research Society Bulletin, Sept. 2009.Google Scholar
13 Jesse, S., Lee, H., and Kalinin, S. V., Rev. Sci. Instrum. 77, 073702 (2006).Google Scholar
14 Kholkin, A. L., Kalinin, S. V., Roelofs, A., and Gruverman, A., in Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale, vol 1, eds. Kalinin, S. and Gruverman, A. (Berlin: Springer) (2006).Google Scholar
15 Crisler, D. F., Cupal, J. J., and Moore, A. B., Proc. IEEE 56, 225 (1968).Google Scholar
16 Royer, D. and Kmetik, V., Electron. Lett. 28, 1828 (1992).Google Scholar
17 Kholkin, A. L., Amdursky, N., Bdikin, I., Gazit, E., and Rosenman, G., ACS Nano 4, 610 (2010).Google Scholar