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Local Crystal Orientation in Laser Annealed Silicon Using a Raman Microprobe

Published online by Cambridge University Press:  21 February 2011

L. A. Farrow ,
J.B. Hopkins  and
G J Fisanick
L. A. Farrow
Affiliation:
CSO/ Bell Laboratories, Murray Hill, N. J.07974
J.B. Hopkins
Affiliation:
ATT/Bell Laboratories, Murray Hills, N.J.07974
G J Fisanick
Affiliation:
ATT/Bell Laboratories, Murray Hills, N.J.07974
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Abstract

In this paper, we discuss the application of polarization selective Raman microprobe spectroscopy to the detailed, non-destructive analysis of the local crystal orientation of a polysilicon sample grown over SiO 2 pads and laser annealed. Intensity measurements taken as a function of input polarization angle are fit to an expression derived from the Raman scattering selection rules to calculate the angles by which the crystal structure is twisted within the original substrate plane, as well as the degree of tipping of the crystal plane away from the plane of the Si substrate. The results give some indication as to the direction of seeding during recrystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 231
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Leamy, H. J., Laser Fabrication of Silicon on Dielectric Substrates, pp. 459–470, in Laser and Electron Beam Interactions with Solids. North Holland Publishing Co., New York, 1982 Google Scholar
2. Pinizzotto, R. F., Lam, H. W. and Vaandrager, B. L., J. Electronic Materials 11, 413 (1982)Google Scholar
3. Baumgart, H., Phillipp, R., and Leamy, H. J., Defect Formation in CW CO2 Laser Annealed Silicon, pp. 355–375, op. cit. ref. 1Google Scholar
4. Brueck, S. R. J., Tsaur, B. Y., Fan, J. C. C., Murphy, D. V., Deutsch, T. F. and Silversmith, D. J., Appl. Phys. Lett. 40, 895 (1982).CrossRefGoogle Scholar
5. Zorabedian, P. and Adar, F., Appl. Phys. Lett. 43, 177 (1983).CrossRefGoogle Scholar
6. Lyon, S. A., Nemanich, R. J., Johnson, N. M. and Biegelsen, D. K., Appl. Phys. Lett. 40, 316 (1982).CrossRefGoogle Scholar
7. Jellison, G. E. Jr. and Modine, F. A., Appl. Phys. Lett. 41, 180 (1982).CrossRefGoogle Scholar
8. Hayes, W. and Loudon, R., Scattering of Light by Crystals, John Wiley & Sons, New York (1978)Google Scholar
9. Trimble, L. E., Celler, G. K., Ng, K. K., Baumgart, H., and Leamy, H. J., Seeded Growth of Si over Si0 2 Substrates by CW Laser Irradiation, pp. 505–520 in Laser and Electron Beam Interactions with Solids, ed. Appleton, B. R. and Celler, G. K., North-Holland Publishing Co., New York (1982)Google Scholar
10. Kendall, D. L. Ann. Rev. Material Sci. 9, 373 (1979);Google Scholar
10a. Geis, M. W., Smith, H. I., Tsaur, B.Y., Fan, J. C. C., Maby, E. W. and Antoniadis, D. A., Appl. Phys. Lett. 40, 158 (1982);Google Scholar
10b. Bezjian, K. A., Smith, H. I., Carter, J. M. and Geis, M. W., J. Electrochem. Soc. 129, 1848 (1982).Google Scholar
11. Joy, D. C., Newbury, D. E., and Davidson, D. L., J. AppI. Phys., 53, 81 (1982)Google Scholar
12. Hishioka, T., Shinoda, Y. and Ohmachi, Y., Appl. Phys. Lett. 43, 92 (1983)Google Scholar
13. Hart, T. R., Aggarwal, R. L. and Lax, M., Phys. Rev. B 1, 638 (1970);Google Scholar
13a. Tsu, R. and Hernandez, J. G., Appl. Phys. Lett. 81, 1016 (1982);CrossRefGoogle Scholar
13b. Malyj, M. and Griffiths, J. E., Appl. Spect. 37, 315 (1983).Google Scholar
14. Margenau, H. and Murphy, G. M., The Mathematics of Physics and Chemistry, D. Van Nostrand Co., New York, 1956, p. 288.Google Scholar
15. Dumin, D. J., J. of Crystal Growth 8, 33 (1971);CrossRefGoogle Scholar
15a. Rai-Choudhury, P. and Schroder, D. K., J. Electrochem. Soc: Solid State Science 118, 107 (1971)Google Scholar
16. Gilmer, G., p. 249 in Materials Research Society Symposia Proceedings, 13, Laser Solid Interactions and Transient Thermal Processing of Materials, ed. Narayan, J., Brown, W. L., and Lemon, R. A., Elsevier Science Publishing Co., Inc., New York (1983)Google Scholar