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Local Channel Temperature Measurements on Pseudomorphic High Electron Mobility Transistors by Photoluminescence Spectroscopy

Published online by Cambridge University Press:  10 February 2011

J.P. Landesman ,
E. Martin ,
B. Depret ,
A. Fily  and
P. Braun
J.P. Landesman
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cedex, France, [email protected]
E. Martin
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cedex, France, [email protected]
B. Depret
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cedex, France, [email protected]
A. Fily
Affiliation:
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cedex, France, [email protected]
P. Braun
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany
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Abstract

The technique of spatially resolved photoluminescence (PL) spectroscopy was used to determine the local channel temperatures on GaAs/GaInAs/GaAlAs pseudomorphic high electron mobility transistors. By focusing a laser beam onto the different regions of the DC-biased transistor, it is shown that the channel temperature can be determined from the energy shift of one of the peaks in the PL spectra, with a spatial resolution of about 1 µm and a temperature resolution in the order of 1 °C. In particular, an asymmetry in the temperature distribution between the drain and source sides is observed. Using this approach, detailed temperature maps of the devices were obtained, as a function of the gate-source voltage VGS. These experimental temperature values are also compared with predictions derived from an analytical model of the thermal resistance in these devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 45
Copyright
Copyright © Materials Research Society 1998

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