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Local Atomic Structure and Electrical Activity of Arsenic Implanted in Silicon

Published online by Cambridge University Press:  25 February 2011

A. Erbil ,
G. S. Cargill III  and
R. F. Boehme
A. Erbil
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
G. S. Cargill III
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
R. F. Boehme
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

We summarize the results of an extensive investigation on ion implanted arsenic in silicon after pulsed laser annealing and laser plus furnace annealing. The experiments are aimed at determining the structural and chemical environment around an arsenic impurity atom and relating that information to the electrical behavior of arsenic in silicon. We have implanted silicon with arsenic, 6×1016 As/cm2 at 100 KeV, followed by laser annealing, to obtain epitaxial regrowth with peak As concentrations of about 8 at.%. Subsequent furnace annealing at 800°C for 30 minutes reduces the apparent electrical activity of the arsenic atoms, increasing the electrical resistivity by a factor of three. We have used EXAFS, together with RBS and ion channeling, to investigate the structural and chemical origins of this deactivation. EXAFS measurements are consistent with As occupying tetrahedral sites in both laser ann-ealed and laser plus furnace annealed samples. Average As-As coordination numbers, found from fitting the EXAFS data, were 0.2 and 4.5 for nearest neighbors and for next nearest neighbors respectively. These coordination numbers suggest that there are regions with As concentrations much greater than the nominal maximum concentration mentioned above, and that the preferred local chemical order in regions of high As content resembles that in GaAs, with Si preferentially occupying Ga-sites. This short-range chemical order is unchanged by the furnace annealing. However, we find that furnace annealing does reduce the As-As second neighbor distance by approximately 0.1Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 41: Symposium K – Advanced Photon and Particle Techniques for the Characterization of Defects in Solids , 1984 , 275
Copyright
Copyright © Materials Research Society 1985

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References

1. White, C.W., Wilson, S.R., Appleton, B.R., and Young, F.W., Jr., J. Appl. Phys. 51, 738 (1980).10.1063/1.327334Google Scholar
2. White, C.W., Pronko, P.P., Wilson, S.R., Appleton, B.R., Narayan, J., and Young, R.T., J. Appl. Phys. 50, 3261 (1979).10.1063/1.326366Google Scholar
3. Kemerink, G.J., DeWit, J.C., De Waard, H., Boerma, D.O. and Niesen, L., Phys. Lett. 82A, 255 (1981).10.1016/0375-9601(81)90201-2Google Scholar
4. Dezsi, I., Van Rossum, M., Langouche, G., Coussement, R., Schroyen, D. and Wu, M.F., Appl. Phys. Lett. 44, 505 (1984).10.1063/1.94813Google Scholar
5. Chu, W.K., Laser and Electron Beam Processing of Electronic Materials, The Electrochemical Society Symposia Proceedings, edited by Anderson, C.L., Celler, G.K., Rozgonyi, G.A., Vol. 20, p.27 (1980).Google Scholar
6. Nobili, D., Carabelas, A., Celotti, G., and Solmi, S., J. Electrochem. Soc. 130, 922 (1983).10.1149/1.2119859Google Scholar
7. Haskell, J., Rimini, E., and Mayer, J.W., J. Appl. Phys. 43, 3423 (1972).10.1063/1.1661732Google Scholar
8. Fujimoto, F., Komaki, K., Ishii, M., Nakayama, H., and Hisatake, K., Phys. Status Solidi A12, K7 (1972).10.1002/pssa.2210120138Google Scholar
9. Picraux, S.T., Brown, W.L., and Gibson, W.M., Phys. Rev. B 6, 1382 (1972).10.1103/PhysRevB.6.1382Google Scholar
10. Cohen, R.L., Feldman, L.C., West, K.W., and Kincaid, B.M., Phys. Rev. Lett. 49, 1416 (1982).10.1103/PhysRevLett.49.1416CrossRefGoogle Scholar
11. Mikkelsen, J.C. Jr., and Boyce, J.B., Phys. Rev. Lett. 49, 1412 (1982).10.1103/PhysRevLett.49.1412Google Scholar
12. Raoux, D., Fontaine, A., Lagarde, P., and Sadoc, A., Phys. Rev. B 24, 5547 (1981).10.1103/PhysRevB.24.5547Google Scholar
13. Lee, P.A., Citrin, P.H., Eisenberger, P. and Kincaid, B.M., Rev. Mod. Phys. 53, 769 (1981).10.1103/RevModPhys.53.769Google Scholar