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The Local Atomic Arrangement in Amorphous Sixc1−x:H By Electron Energy Loss Spectroscopy and Electron Diffraction

Published online by Cambridge University Press:  25 February 2011

J. Tafto  and
F. J. Kampas
J. Tafto
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
F. J. Kampas
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
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Abstract

We have used electron energy loss spectroscopy (EELS) and electron diffraction to study the local atomic arrangement in amorphous SixC1−x:H in the composition range 0.37 < × < 1. In the thin films, which were pre-pared by radio-frequency glow discharge from a mixture of methane and sil-ane, the π at the K-edge of C does not show up even for the highest C-content, i.e., Si0.37C0.63, consistent with fourfold coordinated C in the whole composition range studied. Also the electron diffraction results suggest a tetrahedral network. Models where the minority element is sur-rounded by four atoms of the majority element, fit the experimental data better than models based on a random distribution of Si and C on the tetra-hedral network.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 62: Symposium Q – Materials Problem Solving with the Transmission Electron Microscope , 1985 , 415
Copyright
Copyright © Materials Research Society 1986

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