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Liquid Phase Epitaxial Growth of Fe-Doped Semi-Insulating Inp and Ternary Alloys

Published online by Cambridge University Press:  26 February 2011

S. Isozumi ,
T. Tanahashi ,
M. Kondo ,
M. Sugawara ,
A. Yamaguchi  and
K. Nakajima
S. Isozumi
Affiliation:
FUJITSU LABORATORIES LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01, JAPAN
T. Tanahashi
Affiliation:
FUJITSU LABORATORIES LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01, JAPAN
M. Kondo
Affiliation:
FUJITSU LABORATORIES LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01, JAPAN
M. Sugawara
Affiliation:
FUJITSU LABORATORIES LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01, JAPAN
A. Yamaguchi
Affiliation:
FUJITSU LABORATORIES LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01, JAPAN
K. Nakajima
Affiliation:
FUJITSU LABORATORIES LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01, JAPAN
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Abstract

Fe-doped semi-insul ati ng layers of InP, In0.48A10.52As,and In0.49Ga0.51P have been grown by liquid phase epitaxy for the first time. Behaviors of Fe doping in these materials have been well explained by the solubility of Fe in the growth solution and the temperature dependent distribution coefficients of Fe. It has been found that the distribution coefficients of Fe in the ternary alloys are much greater than those in InP.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 797
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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