Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-16T10:31:57.157Z Has data issue: false hasContentIssue false
  • English
  • Français

Liquid Phase Epitaxial Growth and Characterization of GaAs on InP Substrates

Published online by Cambridge University Press:  22 February 2011

Dong-Keun Kim ,
Hyung-Jong Lee  and
Byung-Teak Lee
Dong-Keun Kim
Affiliation:
Chonnam National University, Kwangju 500–757, Korea
Hyung-Jong Lee
Affiliation:
Chonnam National University, Kwangju 500–757, Korea
Byung-Teak Lee
Affiliation:
Chonnam National University, Kwangju 500–757, Korea
Get access

Abstract

Optimum growth conditions were investigated to obtain high quality heteroepitaxial GaAs layers on InP substrates by liquid phase epitaxy (LPE). Addition of about 0.005wt% of Se to the Ga growth melt effectively suppressed dissolution of the InP substrates into the melt during the initial stage of the growth, resulting in a significantly improved surface morphology. The crystallinity and the surface morphology could be further improved by growing undoped GaAs layers on thin Se-doped buffer GaAs as well as using InP substrates patterned with grating structure. The transmission electron microscopy observation indicated that the misfit dislocations interact with each other at the grating region, resulting in a lower dislocation density in the upper GaAs layer. The (400) double crystal X-ray diffraction peaks of the undoped GaAs showed fullwidth- at-half-maximum of about 380 arcsec, which is comparable with the previously reported values using more sophisticated growth techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 399
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Demeester, P., Ackaert, A., Coudenys, G., Moerman, I., Buydens, L., Pollentier, I., and Daele, P. Van, Progress Crystal Growth and Charact. 22, 53 (1991).Google Scholar
2. Ziel, J. P. Van der, Logan, R. A. and Chand, N., J. Appl. Phys. 64, 3201 (1988).Google Scholar
3. Sakai, S., Matyi, R. J., and Shichijo, H., J. Appl. Phys. 63, 1075 (1988).Google Scholar
4. Yazawa, Y., Minomura, T., Asano, J., and Unno, T., Appl. Phys. Lett. 58, 1292 (1991).Google Scholar
5. Nakamura, S., Sakai, S., Chang, S. S., Ramaswamy, R. V., Kim, J. H., Radhakrishina, G., Liu, J.K., and Katz, J., J. Crystal Growth 97, 303 (1989).Google Scholar
6. Yazawa, Y., Minemura, T. and Unno, T., J. Appl. Phys. 69, 273 (1991).Google Scholar
7. Zhu, J.G., Al-Jassim, M.M., Karam, N.H., and Jones, K.M., Mat. Res. Soc. Proc. 281, (1991) p399 Google Scholar
8. Chikyow, T. and Koguchi, N., in Extended Abstracts of 1992 Int. Conf. on Solid State Devices and Materials, Tsukuba, 1992, p.582 Google Scholar
9. Tournie, E. and Ploog, K.H., Thin Solid Films 231, 43 (1993).Google Scholar
10. Chu, S.N.G., Tsang, W.T., Chiu, T.H., and Macrander, A.T., J. Appl. Phys. 66, 520 (1989).Google Scholar