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Liquid Delivery MOCVD of Ferroelectric PZT

Published online by Cambridge University Press:  10 February 2011

J. F. Roeder ,
B. A. Vaartstra ,
P. C. Van Buskirk  and
H. R. Beratan
J. F. Roeder
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Dr.; Danbury, CT 06810
B. A. Vaartstra
Affiliation:
present address Micron Technology, Inc., Boise, ID
P. C. Van Buskirk
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Dr.; Danbury, CT 06810
H. R. Beratan
Affiliation:
Texas Instruments, Defense Systems & Electronics Group, 13532 N. Central Expressway, Dallas, TX 75243
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Abstract

Ferroelectric PbZrxTi1-x O3 (PZT) films have been deposited by chemical vapor deposition using flash vaporized metalorganic precursors. Crystalline perovskite films approximately 3000Å thick were deposited on Pt/Si substrates at 550–590°C and had dielectric coefficients in the range of 600–1900. Dielectric constant was found to increase with increasing Zr/Ti ratio, rising to the largest values near the morphotropic phase boundary. Remanent polarizations of the PZT were between 20–27 μC/cm2 and the coercive field decreased with increasing Zr/Ti ratio from 43 to 21 kV/cm. Pyroelectric coefficients were measured using the Byer-Roundy technique and ranged from 20–30 nC/cm2K. At 550°C, a direct relationship was observed between precursor composition and film composition. At 590°C, volatility of PbO became appreciable and composition of films with Zr/(Zr+Ti) = 0.3 remained near stoichiometry over a wide range of excess Pb in the precursor. However, this effect was found to diminish for higher ratios of Zr/Ti. The orientation of the PZT films deposited over a range of precursor compositions was similar with some [100] preferred orientation. In contrast, the orientation of a PbTiO3 films could be manipulated by the Pb/Ti ratio in the precursor, with [111] preferred orientations predominating at lower Pb/Ti and [ 100/001]–[111] mixed orientations at higher Pb/Ti ratios.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 123
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Tossell, D.A., Obhi, J.S., Shorrocks, N.M., Patel, A., and Whatmore, R.W., Proceedings of the 8th ISAF, 11–18 (1992).Google Scholar
2. Takayama, R. and Tomita, Y., J. Appl. Phys. 65, 1666 (1989).Google Scholar
3. Deb, K.K., Bennett, K.W., Brody, P.S., and Melnick, B.M., Integ. Ferroelectrics 6, 253 (1995).Google Scholar
4. Ye, C., Tamagawa, T., and Polla, D.L., J. Appl. Phys. 70, 5538 (1991).Google Scholar
5. Dormans, G.J.M, deKeijser, M., and vanVeldhoven, P.J., in Ferroelectric Thin Films, edited by (Mater. Res. Soc. Proc. 243, Pittsburgh, PA, 1992) pp. 203–211.Google Scholar
6. deKeijser, M., Dormans, G.J.M., Veldhoven, P.J. van, and Larsen, P.K., Integ. Ferroelectrics 3, 131 (1993).Google Scholar
7. deKeijser, M., Veldhoven, P.J. van, and Dormans, G.J.M., in Ferroelectric Thin Films II, edited by (Mater. Res. Soc. Proc. 310, Pittsburgh, PA, 1992) pp. 223–234.Google Scholar
8. Gardiner, R.A., Buskirk, P.C. Van, and Kirlin, P.S., in Metal-Organic Chemical Vapor Deposition of Electronic Ceramics, edited by Desu, S.B., Beach, D.B., Wessels, B.W., and Gokoglu, S. (Mater. Res. Soc. Proc. 335, Pittsburgh, PA, 1994) pp. 221–226.Google Scholar
9. Kirlin, P.S., Binder, R., and Gardiner, R.A., U.S. Patent No. 5 204 314 (Apr. 20,1993).Google Scholar
10. Kirlin, P., Bilodeau, S., and Buskirk, P. Van, MOCVD of BaSrTiO3 for ULSI DRAMs,” Integ. Ferroelectrics 7, 307 (1995).Google Scholar
11. Byer, R.L. and Roundy, C.B., Ferroelectrics 3, 333 (1972).Google Scholar
12. Kulwicki, B.M., Amin, A., Beratan, H.R., and Hansen, C.M., Proceedings of the 8th ISAF, 1–10 (1992).Google Scholar
13. Hartl, K.H. and Rau, H., Solid State Comm. 7, 41 (1969).Google Scholar
14. Shimizu, M., Sugiyama, M., Fujisawa, H., Hamano, T., Shisaki, T., and Matsushige, K., J. Cryst. Growth 145, 226 (1994).Google Scholar