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Limiting Steps at Low Temperature in Direct Writing of Al on Si From Tma

Published online by Cambridge University Press:  26 February 2011

J. Flicstein ,
J.E. Bouree ,
J.F. Bresse  and
A.M. Pougnet
J. Flicstein
Affiliation:
CNET - Laboratoire de Bagneux, 92220 BAGNEUX - FRANCE
J.E. Bouree
Affiliation:
Laboratoire de Physique des Solides - 92195 MEUDON - FRANCE
J.F. Bresse
Affiliation:
CNET - Laboratoire de Bagneux, 92220 BAGNEUX - FRANCE
A.M. Pougnet
Affiliation:
Laboratoire de Physique des Solides - 92195 MEUDON - FRANCE
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Abstract

The rates of aluminum line growth, assisted by photolysis, in the normal direction to the Si (100) substrate, indicate that, in a trimethyl-aluminum + hydrogen mixture, only the change in the TMA flux and the UV laser power can play a determinant role. Possible explanation is based on the generated methyl radical “blocking” action leading to a self-limiting deposition rate, as opposed to the enhancement of methyl desorption by hydrogenation to methane. It is shown that dilution by hydrogen decreases the carbon contamination in aluminum line.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 49
Copyright
Copyright © Materials Research Society 1998

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References

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