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Light-Intensity Dependence of the Staebler-Wronski Effect in a-Si:H with Various Densities of Defects

Published online by Cambridge University Press:  01 February 2011

Minoru Kumeda ,
Ryohei Sakai ,
Akiharu Morimoto  and
Tatsuo Shimizu
Minoru Kumeda
Affiliation:
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa 920-8667, Japan.
Ryohei Sakai
Affiliation:
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa 920-8667, Japan.
Akiharu Morimoto
Affiliation:
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa 920-8667, Japan.
Tatsuo Shimizu
Affiliation:
NTT Microsystem Integration Labs, Atsugi 243-0198Japan.
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Abstract

The light-intensity dependence of the photocreation of dangling bonds (DBs) were investigated for a-Si:H films with increasing density of defects before light soaking. Samples in which the density of neutral DBs had been increased by annealing at 400 C for 1 h exhibited a weak light-intensity dependence of the photocreated DBs compared to that for the as-deposited sample. Furthermore, the sample which had been illuminated with a light intensity of 1 W/cm2 for 1 h also showed a weak dependence. The results can be qualitatively explained by using rate equations for the densities of DBs and floating bonds (FBs) based on the FB-mediated photocreation of DBs. When both the densities of DBs and FBs before illumination increase, the light-intensity dependence of the DB density for a moderate value of the illumination time becomes weaker, qualitatively consistent with the observed results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A7.1
Copyright
Copyright © Materials Research Society 2005

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