Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-20T09:26:42.837Z Has data issue: false hasContentIssue false
  • English
  • Français

Light-induced Stability of Layered Amorphous Hydrogenated Silicon Grown with Alternating Substrate Temperature

Published online by Cambridge University Press:  10 February 2011

Jong-Hwan Yoona  and
Czang-Ho Lee
Jong-Hwan Yoona
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Kangwon-do, 200-701, KOREA
Czang-Ho Lee
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Kangwon-do, 200-701, KOREA
Get access

Abstract

We present the results of studies on the light-induced stability of undoped layered hydrogenated amorphous silicon films grown with alternating substrate temperature between optimal and non optimal temperatures for device-quality films. Compared to the single layer films grown at optimal substrate temperature, the layered films show improved stability in the lightinduced state. Under intense light illumination of 3 W/cm2, the steady-state defect density of the layered film reached a saturation of 2×1016 cm−3, while the single layer film saturates at about 6×1016 cm−3. It is found that in the completely degraded state the photoconductivity in the layered film is also improved by a factor of two compared to the single layer film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 387
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292(1977).Google Scholar
2. Mahan, A. H. and Vanecek, M., in Amorphous Silicon Materials and Solar Cells, edited by Stafford, B. L. ( AlP Conf. Proc. 234, Denver, CO, 1991) pp. 195–202.Google Scholar
3. Kwon, D. W. and Cohen, J. D., MRS Proc. 377, 301(1995).Google Scholar
4. Oshorne, I. S., Hata, N., and Matsuda, A., Appl. Phys. Lett. 66, 965(1995).Google Scholar
5. Byun, J. S., Jeon, H. B., Lee, K. H., and Jang, J., Appl. Phys. Lett. 67, 3786(1995).Google Scholar
6. Pinarbasi, M., Abelson, J. B., and Kushner, M. J., Appl. Phys. Lett. 56, 1658(1990).Google Scholar
7. Johnson, N. M., Nebel, C. E., Santos, P. V., Jackson, W. B., Street, R. A., Stevens, K. S., and Walker, J., Appl. Phys. Lett. 59, 1443(1991).Google Scholar
8. Liang, Y. H., Maley, N., and Abelson, J. R., J. Appl. Phys. 75, 3704(1994).Google Scholar
9. Lui, K. M. and Chik, K. P., J. Appl. Phys. 77, 6313(1995).Google Scholar
10. Redfield, D. and Bube, R. H., Appl. Phys. Lett. 54, 1037(1989).Google Scholar