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Light-Induced Metastable Effects in a-Ge:H
Published online by Cambridge University Press: 25 February 2011
Abstract
We report on light induced metastable conductivity changes in a-Ge:H thin films deposited by rf-sputtering. The dark- and the photoconductivity of the samples decrease after light soaking. The changes are metastable and both the defect formation and the defect annealing processes are temperature activated. As in the case of a-Si:H films, the time evolution of the conductivity changes is well represented by a stretched exponential type of decay, with activated time constants.
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- Copyright © Materials Research Society 1990
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