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Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Xiao Liu ,
R.O. Pohl  and
R.S. Crandall
Xiao Liu
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853, [email protected]
R.O. Pohl
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853, [email protected]
R.S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

We observe an increase of the low-temperature internal friction of hydrogenated amorphous silicon prepared by both hot-wire and plasma-enhanced chemical-vapor deposition after extended light-soaking at room temperature. This increase, and the associated change in sound velocity, can be explained by an increase of the density of two-level tunneling states, which serves as a measure of the lattice disorder. The amount of increase in internal friction is remarkably similar in both types of films although the amount and the microstructure of hydrogen are very different. Experiments conducted on a sample prepared by hot-wire chemical-vapor deposition show that this change anneals out gradually at room temperature in about 70 days. Possible relation of the light-induced changes in the low-temperature elastic properties to the Staebler-Wronski effect is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 389
Copyright
Copyright © Materials Research Society 1999

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