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Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

Published online by Cambridge University Press:  10 February 2011

Hong-Seok Choi ,
Keun-Ho Jang ,
Jhun-Suk Yoo  and
Min-Koo Han
Hong-Seok Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Keun-Ho Jang
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jhun-Suk Yoo
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
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Abstract

The fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 323
Copyright
Copyright © Materials Research Society 1996

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