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Light-Induced Changes Among Fast-Relaxing Hydrogens in Plasma-Deposited Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

M. J. Kernan ,
R. L. Corey ,
P. A. Fedders ,
D. J. Leopold ,
R. E. Norberg ,
W. A. Turner  and
W. Paul
M. J. Kernan
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
R. L. Corey
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
P. A. Fedders
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
D. J. Leopold
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
R. E. Norberg
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
W. A. Turner
Affiliation:
Division of Applied Science, Harvard University, Cambridge, MA 02138
W. Paul
Affiliation:
Division of Applied Science, Harvard University, Cambridge, MA 02138
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Abstract

Light-induced rearrangements in a-Si:H,D during and after illumination have been studied by deuteron magnetic resonance (DMR). A film sample was deposited on a 230°C Al substrate by plasma decomposition of S1H4 and D2. The high quality film contained 4 at.% H and 4 at. % D. DMR spectra of fast-relaxing components were examined at 700 msec or less after radio frequency saturation. At 30 K these showed a broad central signal (primarily nanovoid-trapped HD and D2), part of which shifted paramagnetically during illumination. No comparable shifts were shown by spectral components from Si-bonded hydrogen or from microvoid-contained dense fluid hydrogen. The observed post-illumination shifts vanished upon 150°C dark anneal and reflected light-induced metastable magnetic changes in the surroundings of hydrogen trapped in nanovoids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 395
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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