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Light-Excitation-Based Spectroscopy of Electronic Defects in Novel Materials

Published online by Cambridge University Press:  10 February 2011

A. Castaldini ,
A. Cavallini  and
L. Polenta
A. Castaldini
Affiliation:
INFM and Department of Physics, University of Bologna, Italy, [email protected]
A. Cavallini
Affiliation:
INFM and Department of Physics, University of Bologna, Italy, [email protected]
L. Polenta
Affiliation:
INFM and Department of Physics, University of Bologna, Italy, [email protected]
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Abstract

In recent years several spectroscopic methods based on deep level photoionization have been developed because of the demand to investigate materials spreading over a wide range of resistivities. This paper deals with some capacitance- and current-based analyses, that are mature techniques for the characterization of semiconducting as well as semi-insulating materials with respect of deep level identification as well as spatial distribution. Results relevant to novel materials are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 51
Copyright
Copyright © Materials Research Society 2000

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