Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Kamp, M.
Mayer, M.
Pelzmann, A.
and
Ebeling, K. J.
1996.
On Surface Cracking of Ammonia for MBE Growth of GaN.
MRS Proceedings,
Vol. 449,
Issue. ,
Kamp, Markus
Mayer, M.
Pelzmann, A.
and
Ebeling, K. J.
1997.
Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 2,
Issue. ,
Akasaki, Isamu
1998.
Progress in crystal growth and future prospects of group III nitrides by metalorganic vapor-phase epitaxy.
Journal of Crystal Growth,
Vol. 195,
Issue. 1-4,
p.
248.
Akasaki, Isamu
1999.
Renaissance and progress in crystal growth of nitride semiconductors.
Journal of Crystal Growth,
Vol. 198-199,
Issue. ,
p.
885.
Hiramatsu, Kazumasa
Matsushima, Hidetada
Shibata, Takumi
Kawagachi, Yasutoshi
and
Sawaki, Nobuhiko
1999.
Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy.
Materials Science and Engineering: B,
Vol. 59,
Issue. 1-3,
p.
104.
Kern, R.S.
Götz, W.
Chen, C.H.
Liu, H.
Fletcher, R.M.
and
Kuo, C.P.
1999.
Electroluminescence I.
Vol. 64,
Issue. ,
p.
129.
Akasaki, Isamu
2000.
Progress in crystal growth of nitride semiconductors.
Journal of Crystal Growth,
Vol. 221,
Issue. 1-4,
p.
231.
Shur, M.S.
Gaska, R.
Yang, J.W.
Simin, G.
and
Khan, A.
2001.
Strain energy band engineering approach to AlN/GaN/InN heterojunction devices.
p.
436.
Koike, M.
Nagai, S.
Yamasaki, S.
Tezen, Y.
Kojima, A.
and
Iwayama, S.
2001.
GaN-Based MQW Light Emitting Devices.
physica status solidi (a),
Vol. 188,
Issue. 1,
p.
9.
Ryu, Mee-Yi
Chen, C. Q.
Kuokstis, E.
Yang, J. W.
Simin, G.
Khan, M. Asif
Sim, G. G.
and
Yu, P. W.
2002.
Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells.
Applied Physics Letters,
Vol. 80,
Issue. 21,
p.
3943.
Steranka, F.M.
Bhat, J.
Collins, D.
Cook, L.
Craford, M.G.
Fletcher, R.
Gardner, N.
Grillot, P.
Goetz, W.
Keuper, M.
Khare, R.
Kim, A.
Krames, M.
Harbers, G.
Ludowise, M.
Martin, P.S.
Misra, M.
Mueller, G.
Mueller-Mach, R.
Rudaz, S.
Shen, Y.-C.
Steigerwald, D.
Stockman, S.
Subramanya, S.
Trottier, T.
and
Wierer, J.J.
2002.
High Power LEDs - Technology Status and Market Applications.
physica status solidi (a),
Vol. 194,
Issue. 2,
p.
380.
Nakamura, Tetsuya
Mochizuki, Shingo
Terao, Shinji
Sano, Tomoaki
Iwaya, Motoaki
Kamiyama, Satoshi
Amano, Hiroshi
and
Akasaki, Isamu
2002.
Structural analysis of Si-doped AlGaN/GaN multi-quantum wells.
Journal of Crystal Growth,
Vol. 237-239,
Issue. ,
p.
1129.
Kosaki, Masayoshi
Mochizuki, Shingo
Nakamura, Tetsuya
Watanabe, Yasuhiro
Yukawa, Yohei
Nitta, Shugo
Yamaguchi, Shigeo
Amano, Hiroshi
and
Akasaki, Isamu
2002.
MOVPE growth and characterization of Al1−xInxN/GaN multiple layers.
Journal of Crystal Growth,
Vol. 237-239,
Issue. ,
p.
968.
Shibata, N.
2002.
Fabrication of LEDs Based on III-V Nitrides and their Applications.
physica status solidi (a),
Vol. 192,
Issue. 2,
p.
254.
Koike, M.
Shibata, N.
Kato, H.
and
Takahashi, Y.
2002.
Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications.
IEEE Journal of Selected Topics in Quantum Electronics,
Vol. 8,
Issue. 2,
p.
271.
Shibata, Naoki
2004.
Fabrication of LED Based on III-V Nitride and its Applications.
MRS Proceedings,
Vol. 831,
Issue. ,
SHIMONISHI, Shota
YAMAGUCHI, Hisao
and
SHIBATA, Naoki
2004.
Short Wavelength LED Based on III-V Nitride and Its Applications.
The Review of Laser Engineering,
Vol. 32,
Issue. 6,
p.
414.