Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T01:46:38.932Z Has data issue: false hasContentIssue false
  • English
  • Français

Light Induced Etching Of Gaas In A Zinc Atmosphere

Published online by Cambridge University Press:  15 February 2011

R.P. Salathe  and
G. Baskhara Rao
R.P. Salathe
Affiliation:
Institute of Applied Physics, University of Berne, Sidlerstr.5, 3012 Berne, Switzerland
G. Baskhara Rao
Affiliation:
Institute of Applied Physics, University of Berne, Sidlerstr.5, 3012 Berne, Switzerland
Get access

Abstract

N-type GaAs substrates have been exposed to zinc atmospheres at 600 – 800 deg.C and focused light from a Krion laser at 647.1 nm. Etch pits are generated at optical densities of 0.2 – 10 KW/cm2 and exposure times of 5 – 60 minutes. They are characterized by a smooth profile with typical diameters of 50 – 80μm and depths of 0.1 – 50 μ The etch depth depends strongly on the laser power and on the zinc and arsenic vapor concentrations. The onset of etching is characterized by an increase in surface reflectivity of up to 10 per cent which is probably due to the formation of a thin liquid metal film. The growth of this film is initiated by optically generated holes at the semiconductor surface. The film is not saturated and dissolves GaAs from the substrate. In addition to etching, thermal diffusion of zinc can be observed in samples subjected to long exposure times or high temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 65
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Cunnel, F.A. and Gooch, C.H., J. Phys. Chem. Solids 15, 127 (1960)Google Scholar
[2] Weisberg, L.R. and Blanc, J., Phys. Rev. 131, 1548 (1963)CrossRefGoogle Scholar
[3] Casey, H.C. Jr., Panish, M.B., and Chang, L.L., Phys. Rev. 162, 660 (1967)Google Scholar
[4] Black, J.F. and Jungbluth, E.D., J. Electrochem. Soc. 114, 181 (1967)CrossRefGoogle Scholar
[5] Timberlake, A.B., Davies, P.W., and Shilliday, T.S., J. Appl. Phys. 33, 765 (1968)Google Scholar
[6] Rupprecht, H. and Le May, C.Z., J. Appl. Phys. 35, 1970 (1964)CrossRefGoogle Scholar
[7] Heavens, O.S., Optical properties of thin solid films (Dover Publ. Inc., New York 1965) pp. 76 Google Scholar
[8] Boernstein, Landolt vol 11/8, Optische Konstanten (Springer Verlag Berlin 1962) pp. 1 – 13 Google Scholar
[9] Sell, D.D., Casey, H.C. Jr., and Wecht, K.W., J. Appl. Phys. 45, 2650 (1962)Google Scholar
[10] Sturge, M.D., Phys. Rev. 127, 768 (1962)Google Scholar
[11] Panish, M.B., J. Phys. Chem. Solids 27, 291 (1966)Google Scholar
[12] Barrow, R.F., Dodsworth, P.G., Downie, A.R., Jeffries, E.A.N.S., Pugh, A.C.P.,Smitter, F.J., and Swinestead, J.M., Trans. Faraday Soc. 51, 1354 (1955)Google Scholar
[13] Casey, H.C. Jr. and Panish, M.B., Trans. AIME 242, 406 (1968)Google Scholar
[14] Schoonmaker, R.C. and Lemmerman, K.J., J. Chem. Eng. Data 17, 139 (1972)Google Scholar
[15] Pupp, C., Murray, JJ., and Pottie, R.F., J. Chem. Thermodyn. 6, 123 (1974)Google Scholar