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Light Emitting Diode Growth on Curved Gallium Nitride Surfaces

Published online by Cambridge University Press:  25 March 2011

L. E. Rodak ,
K. Lee ,
V. Kumbham ,
V. Narang ,
L. A. Hornak  and
D. Korakakis
L. E. Rodak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, PO Box 6109, Morgantown, WV 26506 U.S.A.
K. Lee
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, PO Box 6109, Morgantown, WV 26506 U.S.A.
V. Kumbham
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, PO Box 6109, Morgantown, WV 26506 U.S.A.
V. Narang
Affiliation:
Department of Physics, West Virginia University, PO Box 6315, Morgantown, WV 26506 U.S.A.
L. A. Hornak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, PO Box 6109, Morgantown, WV 26506 U.S.A.
D. Korakakis
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, PO Box 6109, Morgantown, WV 26506 U.S.A.
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Abstract

III-Nitride based Light Emitting Diodes (LEDs) are heavily pursued for various lighting applications due to the ability to engineer the emission through the visible wavelengths by controlling the alloy composition in the multi quantum well. Planar structures are characterized by a Lambertian emission pattern, however, depending on the applications in which the LED is employed, including but not limited to, general lighting, displays, and sensors, the emission profile may need to be more or less directional. As a result, there is significant interest in both improving the efficiency and controlling the emission profile of nitride based devices. Various components such as lenses and photonic crystals are used to improve light extraction and alter the emission profile while growth on semi-polar substrates is being pursued to minimize inherent polarization effects. In this work, curved Gallium Nitride (GaN) structures have been grown utilizing growth kinetics. These as-grown features do not require the extensive additional fabrication and allow for three-dimensional substrates to be employed for LED fabrication. The details of the fabrication and the optical and electrical characterization of Indium Gallium Nitride based LEDs grown on these structures is discussed.

Keywords

optoelectronicIII-Vepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g06-30
Copyright
Copyright © Materials Research Society 2011

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References

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