Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T02:27:35.240Z Has data issue: false hasContentIssue false
  • English
  • Français

Light Emission from Quantum-Dot-Like Structures in Cubic GaN/InGaN/GaN Double Heterostructures and Quantum Wells

Published online by Cambridge University Press:  21 March 2011

K. Lischka
K. Lischka*
Affiliation:
University of Paderborn, Department of Physics, 33095 Paderborn/Germany [email protected]
Get access

Abstract

Recent results of experimental investigations of cubic GaN/InGaN/GaN double heterostructures grown by molecular beam epitaxy are reviewed. Micro-Raman effect, photoluminescence and photoluminescence excitation spectroscopy as well as high-resolution x-ray diffraction measurements reveal clear evidence that the photoluminescence of these double heterostructures is related to In-rich quantum dot-like structures which are embedded within the InGaN layers. Annealing experiments corroborate the assumption that the formation of the In-rich clusters is terminated already during the growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I7.1.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ambacher, O., J. Phys. D: Appl. Phys. 31, 2653–2653 (1998).Google Scholar
2 Ho, I. and Stringfellow, G. B., Appl. Phys. Lett. 69, 2701–2701 (1996).Google Scholar
3 Saito, T. and Arakawa, Y., Phys. Rev. B 60, 1701–1701 (1999).Google Scholar
4 Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Leite, J. R., and Bechstedt, F., Phys. Rev. B 62, 2475–2475 (2000).Google Scholar
5 Osamura, K., Naka, S., and Murakami, J., J. Appl. Phys. 46, 3432 (1975).Google Scholar
6 Narukawa, Y., Kawakami, Y., Fujika, S., Fujika, S., and Nakamura, S., Phys. Rev. B 55, R1938 (1997).Google Scholar
7 O'Donnell, K. P., Martin, R. W., and Middleton, P. G., Phys. Rev.Lett. 82, 237–237 (1999).Google Scholar
8 Chichibu, S. F., Abare, A. C., Mack, M. P., Minsky, M. S., Deguchi, T., Cohen, D., Kozodoy, P., Fleischer, S. B., Keller, S., Speck, J. S., Bowers, J. E., Hu, E., Mishra, U. K., Coldren, L. A., DenBaars, S. P., Wada, K., Sota, T., and Nakamura, S., Mat. Science and Engineering B59, 298–298 (1999).Google Scholar
9 As, D. J., Growth and characterization of MBE-grown cubic GaN, InGaN and AlGaN, Vol. 20 (Gordon and Breach Publishers, 2002).Google Scholar
10 Tabata, A., Enderlein, R., Leite, J. R., Silva, S. W. d., Galzerani, J. C., Schikora, D., Kloidt, M., and Lischka, K., J. Appl. Phys. 79, 4137 (1996).Google Scholar
11 Siegle, H., Loa, I., Thurian, P., Kaczmarczyk, G., Filippides, L., Hoffmann, A., Thomsen, C., Schikora, D., Hankeln, M., and Lischka, K., Zeitschrift f. physikalische Chemie 200, 187–187 (1997).Google Scholar
12 Tabata, A., Leite, J. R., Lima, A. P., Silveira, E., Lemos, V., Frey, T., As, D. J., Schikora, D., and Lischka, K., Appl. Phys. Lett. 75, 1095–1095 (1999).Google Scholar
13 Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Scolfaro, L. M. R., Frey, T., As, D. J., Schikora, D., and Lischka, K., Phys. Rev. Lett. 84, 3666–3666 (2000).Google Scholar
14 As, D. J., Schmilgus, F., Wang, C., Schöttker, B., Schikora, D., and Lischka, K., Appl. Phys. Lett. 70, 1311–1311 (1997).Google Scholar
15 Goldhahn, R., Scheiner, J., Shokhovets, S., Frey, T., Köhler, U., As, D. J., and Lischka, K., Appl. Phys. Lett. 76, 291–291 (2000).Google Scholar
16 Husberg, O., Khartchenko, A., As, D. J., Vogelsang, H., Frey, T., Schikora, D., Lischka, K., Noriega, O. C., Tabata, A., and Leite, J. R., Appl. Phys. Lett. 79, 1243–1243 (2001).Google Scholar
17 Kitamura, T., Cho, S.-H., Ishida, Y., Shen, X.-Q., Nakanishi, H., Chichibu, S., and Okumura, H., in Growth and characterization of cubic InGaN/GaN multiple quantum wells on 3C-SiC by RF-MBE, Nagoia, 2001, p. 93.Google Scholar
18 Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Leite, J. R., and Bechstedt, F., Phys. Rev. B 63, 085204–1 (2001).Google Scholar
19 Kent, P. R. C. and Zunger, A., Applied Physics Letters 79, 1977–1977 (2001).Google Scholar
20 Micic, O. I., Cheong, H. M., Fu, H., Zunger, A., Sprague, J. R., Mascarenhas, A., and Nozik, A. J., J. Phys. Chem. B 101, 4904–4904 (1997).Google Scholar
21 Chuo, C.-C., Lee, C.-M., and Chyi, J.-I., Appl. Phys Lett. 78, 314–314 (2001).Google Scholar
22 Leonard, F. and Desai, R. C., Phys. Rev. B 57, 4805–4805 (1998).Google Scholar
23 Chan, H., Feenstra, R. M., Northrup, J. E., Zywietz, T., Neugebauer, J., and Greve, D. W., Phys. Rev. Lett. 85, 1902 (2000).Google Scholar