Hostname: page-component-7479d7b7d-68ccn Total loading time: 0 Render date: 2024-07-09T13:23:48.691Z Has data issue: false hasContentIssue false
  • English
  • Français

Light Emission From Erbium Doped Si1-x XGe1Heterostructures

Published online by Cambridge University Press:  10 February 2011

J H Evans-Freeman ,
A T Naveed ,
M Q Huda ,
A R eaker ,
D C oughton  and
A C right
J H Evans-Freeman
Affiliation:
Centre for Electronic Materials, UMIST, PO Box 88, Manchester, M60 1QD, UK
A T Naveed
Affiliation:
Centre for Electronic Materials, UMIST, PO Box 88, Manchester, M60 1QD, UK
M Q Huda
Affiliation:
Dept EEE, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
A R eaker
Affiliation:
Centre for Electronic Materials, UMIST, PO Box 88, Manchester, M60 1QD, UK
D C oughton
Affiliation:
SiGe Microsystems Inc, Ottawa, Canada
A C right
Affiliation:
North East Wales Institute of Higher Education, Wrexham, UK
Get access

Abstract

UHVCVD-grown SiO.s 7Ge0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54ýim have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 133
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yang, Z, Weiss, B L, Shao, G and Namavar, F, J Appi Phys 77, 2254 (1995)Google Scholar
2. Xu, D-X, Janz, S, Williams, R, Allegretto, E, Mailhot, S, He, J J, Baribeau, J-M, Lafontaine, H, Stapledon, J, Fraser, J W, Robillar, M, Jessop, P and Kovacic, S, SPIE 3007, 178 (1997)Google Scholar
3. Polman, A, Custer, J S, Snoeks, E and Hoven, G N van den, Nucl Inst and Methods in Phys Res, B80/81, 653 (1993)Google Scholar
4. Zheng, B, Michel, J, Ren, F Y G, Kimerling, L C, Jacobson, D C and Poate, J M, Appl Phys Lett 64, 2842 (1994)Google Scholar
5. Huda, M Q, Peaker, A R, Evans-Freeman, J H, Houghton, D C and Gillin, W P, Electron Lett 33, 1182 (1997)Google Scholar
6. Hong, S Q, Zong, Q Z and Mayer, J W, Appl Phys Lett 63, 2053 (1993)Google Scholar
7. Paine, D C, Evans, N D and Stoffel, N G J Appl Phys 70, 4278 (1991)Google Scholar
8. Franzo, G, Priolo, F, Coffa, S, Polman, A and Camera, A, Appl Phys Lett 64, 2235 (1994)Google Scholar
9. Benton, J L, Michel, J, Kimerling, L C, Jacobson, D C, Xie, Y-H, Eaglesham, D J, Fitzgerald, E A and Poate, J M, J Appl Phys 70 2667 (1991)Google Scholar
10. Franzo, G, Coffa, S, Priolo, F, Spinella, C, J Appl Phys, 81, 2784 (1997)Google Scholar