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Light and Thermally Induced Metastabilities in Nanocrystalline Silicon

Published online by Cambridge University Press:  01 February 2011

N. P. Mandal  and
S. C. Agarwal
N. P. Mandal
Affiliation:
Department of Physics, Indian Institute of Technology, Kanpur, 208016, India.
S. C. Agarwal
Affiliation:
Department of Physics, Indian Institute of Technology, Kanpur, 208016, India.
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Abstract

Light soaking for short durations and thermal quenching produce metastable states having a higher dark current, higher photo current, a larger photoluminescence and a smaller electron spin resonance signal in porous silicon (PS). Long exposures, however, have the opposite effect. All metastabilities can be removed by annealing at 150°C (1 h), but not by exposure to infrared light. Micro-Raman spectroscopy shows the presence of a-Si:H in the PS sample. However, a closer look shows that our results can not be explained in terms of a-Si:H alone. Our experiments suggest that structural changes involving the movement of hydrogen present on the surface of PS or on PS/a-Si:H interface may be responsible for these effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A17.18
Copyright
Copyright © Materials Research Society 2003

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