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Level Spectrum of a Single Gated Arsenic Donor in a Three Terminal Geometry

Published online by Cambridge University Press:  01 February 2011

Gabriel P. Lansbergen ,
Rajib Rahman ,
Cameron J. Wellard ,
Jaap Caro ,
Insoo Woo ,
Nadine Colleart ,
Serge Biesemans ,
Gerhard Klimeck ,
Lloyd Hollenberg  and
Sven Rogge
Gabriel P. Lansbergen
Affiliation:
[email protected], Delft University of Technology, Kavli Institute of Nanoscience, Delft, Netherlands
Rajib Rahman
Affiliation:
[email protected], Purdue University, West Lafayette, Indiana, United States
Cameron J. Wellard
Affiliation:
[email protected], University of Melbourne, Melbourne, Victoria, Australia
Jaap Caro
Affiliation:
[email protected], Delft University of Technology, Kavli Institute of Nanoscience, Delft, Netherlands
Insoo Woo
Affiliation:
[email protected], Purdue University, West Lafayette, Indiana, United States
Nadine Colleart
Affiliation:
[email protected], IMEC, Leuven, Belgium
Serge Biesemans
Affiliation:
[email protected], IMEC, Leuven, Belgium
Gerhard Klimeck
Affiliation:
[email protected], Purdue University, West Lafayette, Indiana, United States
Lloyd Hollenberg
Affiliation:
[email protected], University of Melbourne, Melbourne, Victoria, Australia
Sven Rogge
Affiliation:
[email protected], Delft University of Technology, Kavli Institute of Nanoscience, Delft, Netherlands
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Abstract

State of the art CMOS devices have been scaled to such dimensions that we need take atomistic approach to understand their operation for nano-electronics. From a bottoms-up perspective, the smallest functional element within a nano-device would be a single (dopant) atom itself. Control and understanding of the eigenenergies and wavefunctions of a single dopant in Si is a key ingredient for device technology beyond-CMOS like quantum-information processing. Here, we will discuss the eigenlevels of a single As donor in a three terminal configuration. The donor is incorporated in the channel of prototype transistors called FinFETs. The measured eigenlevels are shown to consist of levels associated with the donors Coulomb potential, levels associated with a triangular well at the gate interface and hybridized combinations of the two. The theoretical framework in which we describe this system (NEMO-3D) is based on a tight-binding approximation.

Keywords

dopantSinanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1117: Symposium J – Material Science for Quantum Information Processing Technologies , 2008 , 1117-J01-03
Copyright
Copyright © Materials Research Society 2009

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References

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