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Leakage Currents in CVD (Ba,Sr)TiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

C. Basceri ,
S.K. Streiffer ,
A.I. Kingon ,
S. Bilodeau ,
R. Carl ,
P.C. Van Buskirk ,
S.R. Summerfelt ,
P. Mcintyre  and
R. Waser
C. Basceri
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
S.K. Streiffer
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
A.I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
S. Bilodeau
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810–4169
R. Carl
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810–4169
P.C. Van Buskirk
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810–4169
S.R. Summerfelt
Affiliation:
Texas Instruments, M/S 147, PO Box 655936, Dallas, TX 75265
P. Mcintyre
Affiliation:
Texas Instruments, M/S 147, PO Box 655936, Dallas, TX 75265
R. Waser
Affiliation:
RWTH Aachen, D-52056 Germany
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Abstract

We have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO3 thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240–970 kV/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 285
Copyright
Copyright © Materials Research Society 1996

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References

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