Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-23T18:07:55.786Z Has data issue: false hasContentIssue false
  • English
  • Français

Leakage Current Reduction and Ferroelectric Property of BiFe1-xCoxO3 Thin Films Prepared by Chemical Solution Deposition Using Rapid Thermal Annealing

Published online by Cambridge University Press:  31 January 2011

TruongTho Nguyen ,
Takeshi Kanashima  and
Masanori Okuyama
TruongTho Nguyen
Affiliation:
[email protected]@yahoo.com, Graduate School of Engineering Science, Osaka University, Systems Innovation, Toyonaka, Japan
Takeshi Kanashima
Affiliation:
[email protected], Graduate School of Engineering Science, Osaka University, Systems Innovation, Toyonaka, Japan
Masanori Okuyama
Affiliation:
[email protected], Graduate School of Engineering Science, Osaka University, Systems Innovation, Toyonaka, Japan
Get access

Abstract

Ferroelectric Bi1.1Fe0.9Co0.1O3 (BFCO) thin films were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition method using rapid thermal annealing (RTA). The thickness of all BFCO thin films is about 100 nm. Although the BFCO prepared at 545°C has a large value of difference of polarization at zero field, 88 C/cm2, the P-E hysteresis loop of the BFCO thin film prepared at 520°C looks like more saturated and shows 47 C/cm2 of difference of polarization at zero field in the applied electric field of 2 MV/cm. The leakage current of the BFCO film annealed at 520°C, is about 2 × 10-2 A/cm2 at room temperature (RT). Moreover, it is also shown that the saturated possibility of P-E hysteresis loops and in 2 MV/cm their apparent difference of polarization at zero field depend on not only the leakage current but also scanning frequency used to measure BFCO thin films. Accordingly, the P-E hysteresis loops of BFCO thin films prepared from 520°C to 545°C seem to be saturated at high frequency from 10 KHz to 20 KHz when these samples are measured at RT.

Keywords

annealingCoferroelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F06-19
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yun, K. Y., Ricinschi, D., Kanashima, T. and Okuyama, M., Appl. Phys. Lett. 89, 192902–1 (2006).Google Scholar
2 Smolenskii, G., Yudin, V., Sher, E., and Stolypin, Y. E., Sov. Phys. JETP. 16, 622 (1963).Google Scholar
3 Venevtsev, Y. N., Zhadanov, G., and Solov'ev, S., Sov. Phys. Crystallogr. 4, 538 (1960).Google Scholar
4 Smolenskii, G., Isupov, V., Agranovskaya, A., and Kranik, N., Sov. Phys. Solid State 2, 2651 (1961).Google Scholar
5 Xiao, X H, Zhu, J., Li, Y. R., Luo, W. B., Yu, B. F., Fan, L. X., Ren, F., Liu, C., and Jiang, C. Z., J. Phys. D: Appl. Phys. 40, 5775–5777 (2007).Google Scholar
6 Singh, V. R., Garg, A., and Agrawal, D. C., Soli. Stat. Comm, 149. 734–737 (2009).Google Scholar
7 Azuma, M., Niikata, S., Hayashi, N., Oka, K., Takano, M., Funakubo, H., and Shimakawa, Y., Jpn. J. Appl. Phys. 47, 7579–7581 (2008).Google Scholar
8 Yasui, S., Naganuma, H., Okamura, S., Nishida, K., Yamamoto, T., Iijima, T., Azuma, M., Morioka, H., Saito, K., Ishikawa, M., Yamada, T., and Funakubo, H., Jpn. J. Appl. Phys. 47, 7582–7585 (2008).Google Scholar
9 Naganuma, H., Miura, J., Nakajima, M., Shima, H., Okamura, S., Yasui, S., Funakubo, H., Nishida, B., IIjima, T., Azuma, M., Ando, Y., Kamishima, K., Kakizaki, K., and Hiratsuka, N., Jpn. J. Appl. Phys. 47, 7574–7578 (2008).Google Scholar
10 Nakamura, Y., Nakashima, S., and Okuyama, M., J. Appl. Phys. 105, 0616161–4 (2009).Google Scholar