Due to its wide band-gap, Al2O3 is known to have a moderate leakage current and a good dielectric strength [1]. Moreover, this dielectric has a fair permittivity and so constitutes interesting candidate as dielectric for Metal-Insulator-Metal (MIM) capacitor. Atomic Layer Deposition (ALD) allows obtaining a dense and thin Al2O3 amorphous layer. ALD limits problems of interlayer diffusion because Al2O3 is deposited underneath 400°C [2] which is essential when MIM are co-integrated with temperature sensitive structures.

The aim of our investigation is to attempt to tie aluminum oxide properties dielectric with reliability from the help of capacitors of the entire wafer. In this way, conduction mechanism analysis and capacitance measurements were statistically led on the wafer. We particularly focus our study on the quantification of defects and their influence on the leakage current in planar capacitor. Firstly, to estimate the fixed oxide charges densities in the bulk of Al2O3 and to analyze conduction mechanism, Metal-Oxide-Semiconductor (MOS) (Al/Al2O3/HR-Si) is developed. Then, a MIM stack (Al/TiN/Al2O3/TiN/HR-Si) is developed in order to evaluate the leakage current and the electrical reliability of thin films Al2O3 based MIM capacitors. Different performances are observed according to the area on the wafer. That could be explained by the quality of the Al2O3 layer and the interfaces between TiN and the oxide.