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Lead Zirconate Titanate Films Produced by Pulsed Laser Deposition

Published online by Cambridge University Press:  16 February 2011

K. L. Saenger
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
R. A. Roy
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
K. F. Etzold
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
J. J. Cuomo
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The synthesis of ferroelectric lead zirconate titanate (PZT) films by pulsed laser deposition at 248 nm is described. This study has focused on producing thin (≲ 0.6μm) PZT films on bare and platinum coated MgO < 100 > substrates. Deposition was in an oxygen gas ambient (30 mTorr) at temperatures typically ∼ 525 °C. Rutherford Backscattering Spectroscopy (RBS) was used to evaluate film composition. Film lead content was found to decrease both with increasing laser fluence, and increasing substrate temperature. Film microstructure was evaluated by x-ray diffraction. Electrical measurements were made on the films before and after annealing to determine the dielectric constant and polarization. Properties after annealing were substantially improved, with dielectric permittivity values comparable to bulk PZT.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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