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Layer by Layer Growth of GaN Films by Low Temperature Cyclic Process

Published online by Cambridge University Press:  21 March 2011

P. Sanguino ,
S. Koynov ,
M. Niehusl ,
L. V. Melo ,
R. Schwarz ,
H. Alves  and
B. K. Meyer
P. Sanguino
Affiliation:
Departamento de Física, Instituto Superior Técnico, Lisboa, Portugal
S. Koynov
Affiliation:
Departamento de Física, Instituto Superior Técnico, Lisboa, Portugal
M. Niehusl
Affiliation:
Departamento de Física, Instituto Superior Técnico, Lisboa, Portugal
L. V. Melo
Affiliation:
Departamento de Física, Instituto Superior Técnico, Lisboa, Portugal
R. Schwarz
Affiliation:
Departamento de Física, Instituto Superior Técnico, Lisboa, Portugal
H. Alves
Affiliation:
Justus-Liebig-University, Giessen, Germany
B. K. Meyer
Affiliation:
Justus-Liebig-University, Giessen, Germany
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Abstract

Recently we have proposed a new layer-by-layer method for deposition of group-III nitrides from elemental precursors (Ga, N2). This technique is based on a two-step cyclic process, which alternates Pulsed Laser Deposition (PLD) and nitrogen plasma treatment. We have shown that such a process allows to control independently the structure and the N-content of the growing film. The objective of this work is to develop the cyclic process for achieving high quality GaN films. We explore the opportunities to grow stoichiometric epitaxial films on different substrates at relatively low temperatures (400°C to 600°C). This will gives us the possibility to use ZnO epitaxial layers as a buffer without thermal degradation. UV- Visible transmission spectra, X-ray diffraction scans and Atomic Force Microscopy are some of the tools used to characterise and compare the deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.14.1
Copyright
Copyright © Materials Research Society 2002

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