Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:46:58.806Z Has data issue: false hasContentIssue false
  • English
  • Français

Layer by Layer Amorphization in Si: Temperature, Ion Mass and Flux Effects

Published online by Cambridge University Press:  22 February 2011

A. Battaglia ,
G. Romano  and
S.U. Campisano
A. Battaglia
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57 195129, Catania, Italy
G. Romano
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57 195129, Catania, Italy
S.U. Campisano
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57 195129, Catania, Italy
Get access

Abstract

The layer-by-layer amorphization process is explored in a temperature range in which the kinetics of crystallization can be neglected. It has been found that the pure amorphization rate increases exponentially as the substrate temperature is decreased with an apparent activation energy of 0.48 eV. Moreover the rate increases with both the ion flux and the energy deposited into elastic collisions. A phenomenological model is proposed to explain the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 253
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Dennis, J.R. and Hale, E.B., J. Appl. Phys.,49 1119 (1978)Google Scholar
2 Gibbons, J.F., Proc. IEEE 60, 1062 (1972)Google Scholar
3 Morehead, F.F. and Crowder, B.L., Rad. Eff. 25, 49 (1980)Google Scholar
4 Swanson, M.L., Parsons, J.R. and Hoelke, C.W. Rad. Eff. 9 , 249, (1971)Google Scholar
5 Campisano, S.U., Coffa, S., Raineri, V., Priolo, F. and Rimini, E. Nucl. Instrum. and Meth. B 80/81, 514 (1993)Google Scholar
6 Holland, O.W.. Fathy, D., Narayan, J. and Oen, O.S., Rad. Eff. 90, 127 (1985).Google Scholar
7 Schultz, P.J., Jagavish, C., Ridgway, M.C., Elliman, R.G. and Williams, J,S. Phys. Rev. B, 44, 9118 (1991)Google Scholar
8 Williams, J.S., Elliman, R.G., Ridgway, M.C., Jagadish, C., Ellingboe, S., Goldberg, R., Petrovich, M., Wong, W.C., Dezhang, Z., Nucl. Instrum. Meth. B 80/81, 507 (1993)Google Scholar
9 Battaglia, A., Campisano, S.U., J. Appl. Phys. in press Google Scholar
10 Priolo, F., Rimini, E., Mater. Sci. Rep. 5, 319, (1990)Google Scholar
11 Linnros, J., Elliman, R.G. and Brown, W.L. J. Mater. Res. 3, 1208 (1980)Google Scholar
12 Jackson, K.A., J. Mater. Res. 3, 1218 (1988)Google Scholar
13 Battaglia, A., Priolo, F., Rimini, E., Appl. Surf. Sci. 56–58, 577 (1992)Google Scholar