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Lattice Vibrational Properties of SrBi2Ta2O9

Published online by Cambridge University Press:  21 March 2011

Ran Liu  and
Pengdi Han
Ran Liu
Affiliation:
DigitalDNA Laboratories, Motorola, Mesa, AZ 85202, USA
Pengdi Han
Affiliation:
University of Illinois at Urbana-Champaign, Department of Materials Science, Urbana, IL 60801, USA
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Abstract

SrBi2Ta2O9 is one of the layered perovskite ferroelectrics with excellent fatigue resistance and thus has gained great interest of semiconductor industries recently in non-volatile ferroelectric random access memory (FERAM) applications. The understanding of the lattice vibrational properties of this material can provide crucial information on its structure and dielectric behavior. In this work, we carried out Raman spectroscopy study of thin film, powder and single crystal SrBi2Ta2O9. At temperatures above the Curie temperature, all 12 Raman modes expected from the tetragonal (I4/mmm) structure have been observed and assigned to the 4 A1g, 6 Eg and 2 B1g modes based the polarized Raman spectra from the single crystal samples. At lower temperature, the Raman spectra have revealed all 22 A1 modes, but only 3 out of the 20 A2 modes and 5 out of the 42 B1/B2 modes were observed in the ferroelectric phase (A21am). The soft mode was found to be of A1 symmetry and appearing only when light polarization lay in the ab-plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC7.5.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Aurivillius, B., Ark. Kemi, 1, 449 (1949).Google Scholar
2. Jones, R.E., Zurcher, P., Chu, P., Talor, D.J., Zarfar, S., Jing, B., and Gillespie, S.J., Integrated Ferroelectrics, 15, 199 (1997).10.1080/10584589708015711Google Scholar
3. Newnham, R.E., Wolfe, R.W., Horsey, R.S., Diaz-Colon, F.A., and Kay, M.I., Met. Res. Bull., 8, 1183 (1973).Google Scholar
4. Rae, A.D., Thompson, J.G., and Withers, R.L., Acta Cryst., 48, 418 (1992).Google Scholar
5. Subbarao, E.C., J. Phys. Chem. Solids, 23, 665 (1962).Google Scholar
6. Kojima, S., Imaizumi, R., Hamazaki, S., and Takashige, M., Jpn. J. Appl. Phys., 33, 5559 (1994).Google Scholar
7. Liu, Ran, Klein, M.V., Han, P.D., and Payne, D.A., Phys. Rev. B, 45, 7392 (1992).10.1103/PhysRevB.45.7392Google Scholar
8. Liu, J., Zou, G., Yang, H., and Cui, Q., Solid State Commun., 90, 365 (1994).Google Scholar