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Lattice Strain from Holes in Heavily Doped Si:Ga

Published online by Cambridge University Press:  21 February 2011

K. L. Kavanagh ,
G. S. Cargill III ,
R. F. Boehme  and
J. C. P. Chang
K. L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA. 92093
G. S. Cargill III
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
R. F. Boehme
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
J. C. P. Chang
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA. 92093
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Abstract

Heavily doped Si:Ga has been prepared by liquid phase epitaxy (LPE) and by ionimplantation with rapid thermal annealing (RTA) or laser annealing (LA). Peak substitutional Ga concentrations obtained by each technique were 1.5, 2.5 and 2.9 ×1020cm-3, respectively. Substitutional fractions (>90%) were similar in the three types of samples, and the conductivity scaled with the total Ga concentration. A lattice expansion per substitutional Ga atom in Si of +0.9 ± 0. l×10-24cm3 /atom was measured by double crystal x-ray diffraction. The average nearest neighbor Si-Ga bond length measured with extended x-ray absorption fine structure (EXAFS) was 0.237 ± 0.004 nm, indistinguishable, to within experimental error, from the intrinsic Si-Si bond lngth, 0.235 nm. Combining these two results the lattice strain per hole in the Si valence band was calculated, +0.4 ± 0.8x10G-cm3. This result complements the lattice contraction per electron in the Si conduction band (-1.8 ± 0.4x10-24cm 3) already reported for Si:As [G. S. Cargill III, J. Angilelloand K. L. Kavanagh, Phys. Rev. Letters 61, 1748 (1988)].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 53
Copyright
Copyright © Materials Research Society 1989

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