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Lattice strain and composition of Boron-Interstitial Clusters in Crystalline Silicon

Published online by Cambridge University Press:  17 March 2011

D. De Salvador ,
G. Bisognin ,
E. Napolitani ,
L. Aldegheri ,
A.V. Drigo ,
A. Carnera ,
S. Mirabella ,
E. Bruno ,
G. Impellizzeri  and
F. Priolo
D. De Salvador
Affiliation:
MATIS-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
G. Bisognin
Affiliation:
MATIS-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
E. Napolitani
Affiliation:
MATIS-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
L. Aldegheri
Affiliation:
MATIS-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
A.V. Drigo
Affiliation:
MATIS-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
A. Carnera
Affiliation:
MATIS-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
S. Mirabella
Affiliation:
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
E. Bruno
Affiliation:
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
G. Impellizzeri
Affiliation:
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
F. Priolo
Affiliation:
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
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Abstract

In this work we have investigated the average composition of Boron Interstitials Clusters (BICs) and the strain induced in the Si crystal by BICs. We have formed BICs by Si implantation and subsequent annealing of two Si samples, grown by molecular beam epitaxy, containing thin buried layers doped with different B concentrations (1019 and 1020at/cm3). By B chemical profiles diffusion analysis, we have extracted the doses of Si self-interstitials (I) and Boron atoms trapped at the BICs. The B/I stoichiometric ratio is about 1 for the low B concentration and about 3.5 for the high B concentration sample. High-resolution x-ray diffraction analyses provided an estimate of strain profile. While in the low B concentration sample no appreciable strain was detected after BIC formation, at the higher B concentration we found that the tensile strain present in the as grown B doped layer changes to a strong compressive strain as a consequence of BICs formation. For this kind of clusters, the mean volume expansion with respect to the Si matrix is of (29 ± 6) Å3 for each B atom trapped at the BICs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C7.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Stolk, P. A., Gossmann, J. H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraìz, M., Poate, J. M., Luftman, H. S. and Haynes, T. E., J. Appl. Phys. 81, 6031 (1997); S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander, and H. E. Maes, J. Appl. Phys. 91, 8919 (2002), and references therein.Google Scholar
2. Mirabella, S., Bruno, E., Priolo, F., Salvador, D. De, Napolitani, E., and Carnera, A., Appl. Phys. Lett. 83, 680 (2003).Google Scholar
3. Solmi, S., Mancini, L., Milita, S., Servidori, M., Mannino, G., and Bersani, M., Appl. Phys. Lett. 79, 1103 (2001).Google Scholar
4. Mannino, G., Cowern, N., Roozeboom, F., J. van Berkum, Appl. Phys. Lett. 76, 855 (2000).Google Scholar
5. Pelaz, L., Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Jaraìz, M., and Barbolla, J., Appl. Phys. Lett. 74, 3657 (1999).Google Scholar
6. Luo, W. and Clancy, P., J. Appl. Phys. 89, 1596 (2001).Google Scholar
7. Wormington, M., Panaccione, C., Matney, K. M., and Bowen, D. K., Phil. Trans. R. Soc. Lond. A, 357, 2817 (1999)Google Scholar
8. Salvador, D. De, Napolitani, E., Mirabella, S., Impellizzeri, G., Priolo, F., Terrasi, A., Bisognin, G., Berti, M., Drigo, A., Carnera, A., NIM B 216, 286 (2004) and references therein.Google Scholar
9. Mirabella, S., Coati, A., Salvador, D. De, Napolitani, E., Bisognin, G., Berti, M., , Carnera, Drigo, A. V., Scalese, S., Terrasi, A., and Priolo, F., Phys. Rev. B 65, 045209 (2002).Google Scholar
10. Tapfer, L. and Ploog, K, Phys. Rev. B 40, 9802 (1989).Google Scholar
11. Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., and Greene, J. E., Phys. Rev. B 61, 7628 (2000).Google Scholar
12. Aselage, T. L., J. Mater. Res., 13, 1786 (1998)Google Scholar
13. Matkovich, V. I., Acta Cryst., 13, 679 (1960).Google Scholar
14. Agarwal, A., Gossmann, H.-J., Eaglesham, D. J., Herner, S. B., Fiory, A. T., and Haynes, T. E., Appl. Phys. Lett. 74, 2435 (1999)Google Scholar
15. Cowern, N. E. B., Theunissen, M. J. J., Roozeboom, F., and Berkum, J. G. M. van, Appl. Phys. Lett. 75, 181 (1999).Google Scholar