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Lattice Relaxation of the DX Centers in Ga1−x Alx As and of the Pressure–Induced Deep Donors in GaAs

Published online by Cambridge University Press:  26 February 2011

M. F. Li ,
W. Shan ,
P. Y. Yu ,
W. L. Ransen ,
E. R. Weber  and
E. Bauser
M. F. Li
Affiliation:
Department of Physic, University of California, Berkeley, CA 94720 Lawrence Berkeley Laboratory, Berkeley, CA 94720
W. Shan
Affiliation:
Department of Physic, University of California, Berkeley, CA 94720 Lawrence Berkeley Laboratory, Berkeley, CA 94720
P. Y. Yu
Affiliation:
Department of Physic, University of California, Berkeley, CA 94720 Lawrence Berkeley Laboratory, Berkeley, CA 94720
W. L. Ransen
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
E. R. Weber
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720 Department of Material Sciences and Mineral Engineering, University of galifornia, Berkeley, CA 94720
E. Bauser
Affiliation:
Max–Planck-Institut fur Festkorperforschung, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

Deep Level Transient Spectroscopies (DLTS) and capacitance transient techniques have been applied to GaAs:Si and to Ga1−xAlxAs:Te (x=0.35) under quasi-hydrostatic pressure using a diamond anvil cell. By substituting the experimental pressure coefficients of the defect energies into a model proposed by Li and Yu (Solid State Commun. 61, 13 (1987)) we concluded that both the DX center in the GaAlAs alloy and the pressure-induced deep donor (PIDD) in GaAs have large lattice relaxations associated with them.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 573
Copyright
Copyright © Materials Research Society 1988

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References

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