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Lattice Parameters and Thermal Expansion of Important Semiconductors and Their Substrates

Published online by Cambridge University Press:  15 March 2011

Robert R. Reeber  and
Kai Wang
Robert R. Reeber
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695-7907
Kai Wang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695-7907
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Abstract

Thermal expansion and lattice parameters are useful thermophysical properties of materials. A knowledge of their temperature dependence is essential for optimizing device design and crystal growth conditions while minimizing the residual stress in epitaxial films and electronic devices. Currently first principles theory can predict lattice parameters to 0.01%. Information required for device design and thin film crystal growth requires improvements two to three orders of magnitude better than this. Available experimental results from our work and the literature will be reviewed in terms of a high temperature predictive model. Tables of thermal expansion and lattice parameters for AlN, GaN, 6H-SiC, β-SiC, MgO, Al2O3, ZnO and GaAs are provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.35.1
Copyright
Copyright © Materials Research Society 2000

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References

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