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Lattice Location of Rare Earth Ions in Semiconductors: Interpretation and Limitations of Using g Values

Published online by Cambridge University Press:  01 February 2011

David Carey
David Carey*
Affiliation:
Nanoelectronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom. Email: [email protected]
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Abstract

The g values of rare earth ions obtained from either paramagnetic resonance or Zeeman measurements are often used to interpret the location and/or environment surrounding rare earth ions. In the case of centres with cubic symmetry the g value can be used to distinguish between substitutional and interstitial sites. For centres with less than cubic symmetry the average g value, taken as 1/3 trace of the g tensor, is often used as an indication of the lattice location and/or a measure of the strength of the local crystal field. This approach is widely used but is based on the assumption that the non-cubic terms in the total crystal field potential are small compared with the cubic crystal field. In this paper we have explored this assumption by calculating the principal g values in axial crystal fields for the Er3+ ion. We examine the limits over which the average g value approach is valid. Comparison is made with published results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V6.7
Copyright
Copyright © Materials Research Society 2005

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References

1. Polman, A., Hoven, G.N. van der, Custer, J.S., Shin, J.H., and Serna, R., J. Appl. Phys. 77, 1256 (1997).Google Scholar
2. Priolo, F., Franzò, G., Coffa, S., Polman, A., Libertino, S., Barklie, R. C. and Carey, D., J. Appl. Phys. 78, 3874 (1995).Google Scholar
3. Terrasi, A., Franzò, G., Coffa, S., Priolo, F., D'Acapito, F. and Mobilio, S., Appl. Phys. Lett. 70 1712 (1997)Google Scholar
4. Vinh, N.Q., Przybylinska, H., Krasil'nik, Z.F. and Gregorkiewicz, T., Phys. Rev. Lett. 90, 066401 (2003)Google Scholar
5 Carey, D., Barklie, R. C., Donegan, J. F., Priolo, F., Franzò, G. and Coffa, S., Phys. Rev. B 59, 2773 (1999).Google Scholar
6. Wu, S.-Y. and Dong, H.-N., J. Alloys and Compounds 379, 36 (2004).Google Scholar
7.values quoted from Abragam, A. and Bleaney, B. Electron Paramagnetic Resonance Ions (Oxford: Oxford University Press, 1970)Google Scholar
8. Ammerlann, C.A.J. and Maat-Gersdorf, I. De, Appl. Magn. Reson. 21, 13 (2001).Google Scholar